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Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design


Abstract "The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at r... » read more

Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Manufacturing Bits: Oct. 20


Thermometers for 3D measurements The National Institute of Standards and Technology (NIST) is developing a nano-thermometer technology that could one day take 3D temperature measurements at the microscopic scale. The project, called Thermal Magnetic Imaging and Control (Thermal MagIC), hopes to develop tiny thermometers based on magnetic nanoparticles. These tiny thermometers could be injec... » read more