A Comprehensive Study Of Integrating 2D Materials With CFET Architecture (SKKU, et al.)


A new technical paper, "Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors," was published by researchers at Sungkyunkwan University, Hanyang University, Istituto Italiano di Tecnologia, Shanghai University, Jeonbuk National University, and Kyonggi University. Abstract "With planar complementary metal-oxide-semiconductor (CMOS) scaling ... » read more

Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH)


A new technical paper, "Revealing and Engineering Contact-Origin Noise in Ultrathin Tellurium Transistors," was published by researchers at Pohang University of Science and Technology. Abstract "Tellurium (Te) has emerged as a promising p-type semiconductor for ultrathin electronics owing to its strong air stability, excellent hole transport, narrow bandgap, and BEOL-integration compatibi... » read more

Role of Elastomer Structure in Blending Strategy for Stretchable Semiconducting Thin Films (CAS, RIKEN)


A new technical report titled "Polymer semiconductor blends with remarkably stable semiconducting performance under large and cyclic mechanical deformation" was published by Chinese Academy of Sciences (CAS) and RIKEN Center for Sustainable Resource Science. The paper states: "We report deformable blend thin films of polymer semiconductors with PDPPTT (p-type) and N2200 (n-type) as the ex... » read more

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

High-Performance P-Type FET Arrays With Single-Crystal 2D Semiconductors And Fermi-Level-Tuned vdW Contact Electrodes


A technical paper titled “Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes” was published by researchers at Ulsan National Institute of Science and Technology (UNIST), University of Pennsylvania, Institute for Basic Science (IBS), Sogang University, and Changwon National University. Abstract: "High-performance p-type t... » read more

Power/Performance Bits: June 1


Stronger PUFs Researchers from Ohio State University and Potomac Research propose a new version of physical unclonable functions, or PUFs, that could be used to create secure ID cards, to track goods in supply chains, and as part of authentication applications. "There's a wealth of information in even the smallest differences found on computers chips that we can exploit to create PUFs," sai... » read more