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Advanced Materials For High-Temperature Process Integration


From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically. One of the key pinch points is the tradeoff between planarization and the high-temperature stability required from carbon films used in patterning and post-patterning process integration. Patter... » read more

A Study Of Next-Generation CFET Process Integration Options


Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options


Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. [1] The fabrication of a Complementary-Field Effect Transistor... » read more