EDA’s Hedge Plays


While 14/16nm process technologies with finFETs and double patterning have pushed complexity to new heights, the move to 10nm fundamentally will change a number of very basic elements of the design through manufacturing flow—and EDA vendors will be caught in the middle of having to make hard choices between foundries, processes, packaging approaches, and potentially which markets to serve. ... » read more

Disruptive R&D


Leading university researchers presented their most promising technologies — describing developments ranging from sustainable metal cluster technology (that’s already spawned three notable startups) to resonance-based detection for more accurate MEMS devices — at the new Breakthrough Research Technologies session and the Silicon Innovation Forum at SEMICON West 2014. OSU metal cluster... » read more

Semiconductor R&D Crisis Ahead?


Listen to engineering management at chipmakers these days and a consistent theme emerges: They’re all petrified about where to place their next technology bets. Do they move to 14/16nm finFETs with plans to shrink to 10nm, 7nm and maybe even 5nm? Do they invest in 2.5D and 3D stacked die? Or do they eke more from existing process nodes using new process technologies, more compact designs and ... » read more

Imec Launches R&D Tool Hub


The semiconductor industry is entering yet another inflection point. Consumers want faster mobile systems with more functions. So, chipmakers are under pressure to deliver new and low-power chips that are smaller and faster. The problem is that IC design and chip manufacturing costs continue to escalate. These costs, in turn, are fueling an ongoing shakeout in the chip and fab tool industrie... » read more

VLSI Kyoto – The SOI Papers


By Adele Hars There were some breakthrough FD-SOI and other excellent SOI-based papers that came out of the 2013 Symposia on VLSI Technology and Circuits in Kyoto (June 10-14, 2013). By way of explanation, VSLI comprises two symposia: one on Technology; one on Circuits. However, papers that are relevant to both were presented in “Jumbo Joint Focus” sessions.  The papers should all b... » read more

FinFET Isolation: Bulk vs. SOI


Terry Hook of IBM recently contributed an article to ASN about FinFET isolation issues on bulk vs. SOI.  It generated immense interest, and created lots of discussion on various LinkedIn groups.  In case you missed it, here it is again. (This article is based on an in-depth presentation Terry gave at the SOI Consortium's Fully-Depleted Tech Workshop, held during VLSI-TSA in Taiwan, April 2... » read more

SOI Highlights at Common Platform Tech Forum


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ The 2013 Common Platform Technology Forum showcased “the latest technological advances being delivered to the world’s leading electronics companies,” so of course SOI-based topics were well-represented. Happily, those of us who weren’t able to get over to Silicon Valley were able to attend “virtually” via a ... » read more

Wafer Leaders Extend Basis for Global SOI Supply


Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ It’s a bright green light from the world leaders in SOI wafer capacity. Soitec, the world leader in SOI wafer production, and long-time partner Shin-Etsu Handatai (SEH), the world’s biggest producer of silicon wafers, have extended their licensing agreement and expanded their technology cooperation. SEH is a $12... » read more

Leti Looks at Using Strain with FD-SOI for High-Perf Apps


The researchers at Leti working on FD-SOI have extremely deep expertise in it. One of the areas they've looked at is performance boosters. With the interest in FD-SOI rapidly increasing on the heels of the recent ST-GF announcement, their work becomes even more timely. A key Leti team wrote a summary of some recent strain work, which first appeared as part of the Advanced Substra... » read more

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