tag: random dopant fluctuation

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 0

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Target: 50% Reduction In Memory Power
By Brian Bailey - 11 Apr, 2019 - Comments: 3

Memory consumes about 50% or more of the area and about 50% of the power of an SoC, and those percentages are likely to increase. The problem is that static random access memory (SRAM) has not scaled in accordance with Moore's Law, and that will not change. In addition, with many devices not chasing the latest node and with power becoming an increasing concern, the industry must find ways to... » read more

Foundries Prepare For Battle At 22nm
By Mark LaPedus - 19 Nov, 2018 - Comments: 0

After introducing new 22nm processes over the last year or two, foundries are gearing up the technology for production—and preparing for a showdown. GlobalFoundries, Intel, TSMC and UMC are developing and/or expanding their efforts at 22nm amid signs this node could generate substantial business for applications like automotive, IoT and wireless. But foundry customers face some tough choic... » read more

22nm Process Technology
By Ed Sperling - 19 Jul, 2018 - Comments: 0

Jamie Shaeffer, senior director of product line management at GlobalFoundries, talks about how FD-SOI compares with bulk technologies, where it will be used and why, and future stacking options. https://youtu.be/2i7GJRxcNRs » read more

22nm Process War Begins
By Mark LaPedus - 23 Apr, 2017 - Comments: 1

Many foundry customers at the 28nm node and above are developing new chips and are exploring the idea of migrating to 16nm/14nm and beyond. But for the most part, those companies are stuck because they can’t afford the soaring IC design costs at advanced nodes. Seeking to satisfy a potential gap in the market, [getentity id="22819" comment="GlobalFoundries"], [getentity id="22846" e_name="... » read more

Bulk CMOS Vs. FD-SOI
By Mark LaPedus - 19 May, 2016 - Comments: 2

The leading edge of the chip market increasingly is divided over whether to move to finFETs or whether to stay at 28nm using different materials and potentially even advanced packaging. Decisions about which approach to take frequently boil down to performance, power, form factor, cost, and the maturity of the individual technologies. All of those can vary by market, by vendor and by process... » read more

Fabless-Foundry Model Under Stress
By Ed Sperling - 26 Jun, 2012 - Comments: 0

By Mark LaPedus The semiconductor roadmap was once a smooth and straightforward path, but chipmakers face a bumpy and challenging ride as they migrate to the 20nm node and beyond. Among the challenges seen on the horizon are the advent of 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, and the questionable availability of extreme ultraviolet (EUV) lithography. ... » read more

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