tag: SAQP

Inside Multi-Beam E-Beam Lithography
By Mark LaPedus - 19 Nov, 2015 - Comments: 4

Semiconductor Engineering sat down with David Lam, chairman of Multibeam, a developer of multi-beam e-beam tools for direct-write lithography applications. Lam is also a venture capitalist. He founded Lam Research in 1980, but left as an employee in 1985. What follows are excerpts of that conversation. SE: How has the equipment business changed over the years and what’s the state of the i... » read more

ALD Market Heats Up
By Mark LaPedus - 17 Sep, 2015 - Comments: 1

Amid the shift to 3D NAND, finFETs and other device architectures, the atomic layer deposition (ALD) market is heating up on several fronts. Applied Materials, for example, recently moved to shakeup the landscape by rolling out a new, high-throughput ALD tool. Generally, [getkc id="250" kc_name="ALD"] is a process that deposits materials layer-by-layer at the atomic level, enabling thin and ... » read more

10nm Fab Challenges
By Mark LaPedus - 21 May, 2015 - Comments: 1

After a promising start in 2015, the semiconductor equipment industry is currently experiencing a slight lull. The pause is expected to be short-lived, however. Suppliers of [getkc id="208" comment="3D NAND"] devices are expected to add more fab capacity later this year. And about the same time, foundries are expected to order the first wave of high-volume production tools for 10nm. At 10nm... » read more

The Bumpy Road To 10nm FinFETs
By Mark LaPedus - 21 May, 2015 - Comments: 0

Foundry vendors are currently ramping up their 16nm/14nm [getkc id="185" kc_name="finFET"] processes in the market. Vendors are battling each other for business in the arena, although the migration from planar to finFETs is expected to be a slow and expensive process. Still, despite the challenges at 16nm/14nm, vendors are gearing up for the next battle in the foundry business—the 10nm nod... » read more

The Bumpy Road To FinFETs
By Mark LaPedus - 15 May, 2014 - Comments: 2

The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation transistor technology also could allow the industry to extend CMOS to the 10nm node and perhaps beyond. But as it turns out, finFET technology is also harder to master than previously thought. For exam... » read more

Directed Self-Assembly Gains Momentum
By Mark LaPedus - 20 Mar, 2014 - Comments: 0

At last year’s SPIE Advanced Lithography symposium, directed self-assembly (DSA) grabbed the spotlight as chipmakers provided the first glimpse of their initial work and results with the technology. The results were stunning, thereby propelling DSA from a curiosity item to a possible patterning solution for next-generation devices. Last year, in fact, GlobalFoundries, IBM, Intel and Sams... » read more

EUV Reaches A Crossroads
By Mark LaPedus - 20 Mar, 2014 - Comments: 3

[gettech id="31045" comment="EUV"] (EUV) [getkc id="80" comment="lithography"] is at a crossroads. 2014 represents a critical year for the technology. In fact, it may answer a pressing question about EUV: Does it work or not? It’s too early to make that determination right now, but there are more uncertainties than ever for the oft-delayed technology. Originally aimed for the 65nm node in... » read more

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