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Nanosheet FETs Drive Changes In Metrology And Inspection


In the Moore’s Law world, it has become a truism that smaller nodes lead to larger problems. As fabs turn to nanosheet transistors, it is becoming increasingly challenging to detect line-edge roughness and other defects due to the depths and opacities of these and other multi-layered structures. As a result, metrology is taking even more of a hybrid approach, with some well-known tools moving... » read more

E-beam’s Role Grows For Detecting IC Defects


The perpetual march toward smaller features, coupled with growing demand for better reliability over longer chip lifetimes, has elevated inspection from a relatively obscure but necessary technology into one of the most critical tools in fab and packaging houses. For years, inspection had been framed as a battle between e-beam and optical microscopy. Increasingly, though, other types of insp... » read more

Security In 2.5D


The long-anticipated move to 2.5D and fan-outs is raising some familiar questions about security. Will multiple chips combined in an advanced package be as secure as SoCs where everything is integrated on the same die? The answer isn't a simple yes or no. Put in perspective, all chips are vulnerable to [getkc id="253" kc_name="side channel attacks"], hacking of memory—a risk that increases... » read more

Why Every Chip Can Be Hacked With This Tool


As explained by Darth Vader in the classic Star Wars saga, the line between good and evil can be very thin. What is sometimes developed for the benefit technology, in the hands of the wrong people, can be devastating. That may seem a bit melodramatic when it comes to discussions around focused ion beam (FIB) applications in semiconductors, but the analogy is quite real. Focused ion beam tec... » read more