Purity Requirements in the Semiconductor Industry (RMIT, ICTEAM, U. of Edinburgh)


A new technical paper titled "Purer than pure: how purity reshapes the upstream materiality of the semiconductor industry" was published by researchers at Royal Melbourne Institute of Technology, Université catholique de Louvain, and University of Edinburgh. Abstract "Growing attention is given to the environmental impacts of the digital sector, exacerbated by the increase of digital produ... » read more

Precision Under Pressure: Managing Materials Complexity In Advanced Packaging


In the race to extend Moore's Law through advanced packaging, the limits of precision are no longer defined solely by lithography. Increasingly, they are dictated by the unpredictable behavior of materials. Semiconductor packaging today is no longer limited to just silicon and copper. It includes an expanding range of polymers, adhesives, dielectrics, exotic metals, along with substrates suc... » read more

Thermoelectricity in Topological Flat-Band Compounds (TU Wien, et al.)


A new technical paper titled "Topological Flat-Band-Driven Metallic Thermoelectricity" was published by researchers at TU Wien, Los Alamos National Lab, Flatiron Institute and others. Abstract "Materials where flattened electronic dispersions arise from destructive phase interference, rather than localized orbitals, have emerged as promising platforms for studying emergent quantum phenome... » read more

2D Materials Roadmap: Current And Future Challenges, Solutions


A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Synthesis Of An Ultrathin Vanadium Dioxide Film On A Flexible Substrate, Preserving Film’s Electrical Properties


A new technical paper titled "Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior" was published by researchers at Osaka University and National Institute for Materials Science. Abstract "We report on the preparation of vanadium dioxide (VO2) ul... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

The Impact Of Simulation On The Carbon Footprint of Wafer Fab Equipment R&D


A new technical paper titled "Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI" was published by researchers at Lam Research. Abstract "Computational simulation has been used in the semiconductor industry since the 1950s to provide engineers and managers with a faster, more cost-effective method of designing semiconductors. With increased pressure in t... » read more

Novel Family of Semiconductors


New research paper titled "Semiconducting silicon–phosphorus frameworks for caging exotic polycations" from researchers at Department of Chemistry, Iowa State University, and Ames Laboratory, U.S. Department of Energy. Abstract "A series of novel semiconductors AAe6Si12P20X (A = Na, K, Rb, Cs; Ae = Sr, Ba; X = Cl, Br, I) is reported. Their crystal structures feature a tetrahedral Si–P f... » read more

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy


Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via tw... » read more

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure


Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

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