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Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated

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Abstract
“A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug efficiency of UV-LED with stair-like Si-doping GaN are significantly improved. Through the analysis of the experimental and simulation results, we can infer that there are two reasons for the improvement of photoelectric characteristics: reduction of dislocation density and alleviating of current crowding of UV-LEDs by introduced stair-like Si-doping GaN.”

Find the technical paper link here (open access).

Fan, Xiaomeng, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang, and Yue Hao. 2021. “Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure” Crystals 11, no. 10: 1203. https://doi.org/10.3390/cryst11101203. Published: 6 October 2021.



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