Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

Power/Performance Bits: Mar. 26

Material holds both electrons, holes Researchers at Ohio State University discovered a material that can hold both electrons and holes. They hope the material, the layered metal crystal NaSn2As2, could simplify electronics, potentially removing the need for multiple layers or materials. "It is this dogma in science, that you have electrons or you have holes, but you don't have both. But our... » read more