tag: Xidian University

Technical Paper Round-up: May 3
By Linda Christensen - 03 May, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=24 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

HD Map (EdgeMap) Crowdsources Data From Connected Vehicles in Auto Edge Computing
By Technical Paper Link - 30 Apr, 2022 - Comments: 0

New research paper from University of Nebraska-Lincoln, Xidian University and University of North Carolina at Charlotte. Abstract "High definition (HD) map needs to be updated frequently to capture road changes, which is constrained by limited specialized collection vehicles. To maintain an up-to-date map, we explore crowdsourcing data from connected vehicles. Updating the map collaborati... » read more

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
By Technical Paper Link - 06 Oct, 2021 - Comments: 0

Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

Power/Performance Bits: Oct. 5
By Jesse Allen - 05 Oct, 2021 - Comments: 0

Modeling resistive-switching memory Researchers from Singapore University of Technology and Design (SUTD) and Chang Gung University developed a new toolkit for modeling current in resistive-switching memory devices. The team said that traditional physical-based models need to consider complex behaviors to model current in resistive memory, and there's a risk of permanent device damage due t... » read more

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

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