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Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure


Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

Power/Performance Bits: Oct. 5


Modeling resistive-switching memory Researchers from Singapore University of Technology and Design (SUTD) and Chang Gung University developed a new toolkit for modeling current in resistive-switching memory devices. The team said that traditional physical-based models need to consider complex behaviors to model current in resistive memory, and there's a risk of permanent device damage due t... » read more

Manufacturing Bits: Dec. 23


Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more