tag: SiC

48V Applications Drive Power IC Package Options
By Bill Schweber - 21 Jan, 2021 - Comments: 1

The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more

Mobility And 5G Drive Adoption Of New Materials For Power Devices
By Serena Brischetto - 21 Jan, 2021 - Comments: 0

Electric mobility, renewable energy, and other technology innovations like IoT, 5G, smart manufacturing, and robotics all require reliability, efficiency, and compact power systems, fueling the adoption of silicon carbide (SiC) and gallium nitride (GaN) to support lower voltages in significantly smaller devices. But chip designers must overcome the technological and economical challenges of int... » read more

Novel Etch Technologies Utilizing Atomic Layer Process For Advanced Patterning
By TEL - 17 Dec, 2020 - Comments: 0

We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO2 and SiC films. In addition, we have developed selective etch of SiC with N ion modification. On the other hand, in the patterning etch processes,... » read more

Manufacturing Bits: Sept. 22
By Mark LaPedus - 22 Sep, 2020 - Comments: 0

Hairy nanoparticles The U.S. Air Force Research Laboratory is developing a new type of material called preceramic polymer-grafted nanoparticles or “hairy nanoparticles” (HNP). HNPs can be used to manufacture a new class of aircraft parts made of ceramic composite materials. An HNP is a hybrid material. It is based on a polymer shell, which is bound to a nanoparticle core, according to t... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 28 Aug, 2020 - Comments: 0

Trade As reported, the U.S. recently implemented more restrictions on U.S. chip sales to Huawei. In response, SEMI has released the following statement in response to the new export control rule changes announced by the U.S. Commerce Department: “SEMI recognizes the role of export control measures to address threats to U.S. national security. However, we are very concerned the new export ... » read more

Power Amp Wars Begin For 5G
By Mark LaPedus - 24 Aug, 2020 - Comments: 2

Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

Improving Reliability For GaN And SiC
By Mark LaPedus - 18 Jun, 2020 - Comments: 2

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

The Chemistry Of Semiconductors
By Ed Sperling - 21 May, 2020 - Comments: 0

At each new process node, the chemistry of chip manufacturing has become much more complex than at previous nodes. But at 5nm and below, it's going to get orders of magnitude more complex. For the first few decades, the chemistry of chips was largely shielded from view for most of the industry. Caustic gases were relatively well understood because they are a potential health hazard, but the ... » read more

High-Performance 300 kW 3-Phase SiC Inverter Based On Next Generation Modular SiC Power Modules
By Wolfspeed, a Cree Company - 21 May, 2020 - Comments: 0

Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of silicon carbide (SiC) MOSFETs. The inverter was designed with a holistic approach with careful consideration of module specifications, busbar technology, DC link capacitors, and a high-performance... » read more

Making Chips At 3nm And Beyond
By Mark LaPedus and Ed Sperling - 16 Apr, 2020 - Comments: 4

Select foundries are beginning to ramp up their new 5nm processes with 3nm in R&D. The big question is what comes after that. Work is well underway for the 2nm node and beyond, but there are numerous challenges as well as some uncertainty on the horizon. There already are signs that the foundries have pushed out their 3nm production schedules by a few months due to various technical issu... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy