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Selective etching of silicon nitride over silicon oxide using ClF3 /H2 remote plasma


Researchers from Sungkyunkwan University, MIT and others present an option for selective etching. Abstract "Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiNx over SiOy has been investiga... » read more

System Bits: July 15


Silicon oxide memories Thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods, Rice University’s silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production. Rice’s silicon oxide memories are a type of two-terminal, “resistive random-access memory” (RRAM) ... » read more