Will China Succeed In Memory?


China's fledging memory makers are expected to reach a major milestone and move into initial production this year, although vendors are already running into various roadblocks. China's domestic vendors are focusing on two markets, 3D NAND and DRAM. In both cases local vendors are either behind in technology, struggling to develop these products, or both. And one vendor recently was hit with ... » read more

Going Beyond GPUs With GDDR6


Supported by Micron Technology, SK Hynix and Samsung, GDDR6 SGRAM will feature a maximum data transfer rate of 16 Gbps, along with an operating voltage of 1.35V. Although initially targeted at game consoles and PC graphics, the latest iteration of GDDR is expected to be deployed across multiple verticals, with Micron specifically highlighting the data center and automotive sector. Similarly,... » read more

The Week In Review: Manufacturing


Market research The SEMI Industry Strategy Symposium (ISS) opened with the theme “Smart, Intuitive & Connected: Semiconductor Devices Transforming the World.” Click here for some of the highlights at ISS. Here are more highlights from ISS. Korea is on a spending spree for fab tools. In total, Samsung and SK Hynix are forecast to invest over $20 billion in fab tools worldwide in 2018, ... » read more

What’s Next in 3D NAND?


In 2018, the industry needs to keep a close eye on 3D NAND as the vendor base is in the midst of some major changes. The changes involve several partnerships, including the Toshiba/Western Digital and Intel/Micron duos. It also impacts the other 3D NAND players, namely Samsung and SK Hynix. But first, demand for NAND flash memory remains robust due to the onslaught of data in systems. ... » read more

A New Memory Contender?


Momentum is building for a new class of ferroelectric memories that could alter the next-generation memory landscape. Generally, ferroelectrics are associated with a memory type called ferroelectric RAMs (FRAMs). Rolled out by several vendors in the late 1990s, FRAMs are low-power, nonvolatile devices, but they are also limited to niche applications and unable to scale beyond 130nm. While... » read more

Will Fab Tool Boom Cycle Last?


Fab equipment spending is on pace for a record year in 2017, and it now appears that momentum could continue into 2018. Fab tool vendors found themselves in the midst of an unexpected boom cycle in 2017, thanks to enormous demand for equipment in [getkc id="208" comment="3D NAND"] and, to a lesser degree, [getkc id="93" kc_name="DRAM"]. In the logic/foundry business, however, equipment deman... » read more

The Week In Review: Manufacturing


Chipmakers Apple has announced the latest award from its $1 billion Advanced Manufacturing Fund. Finisar, a manufacturer of optical communications components, will receive $390 million in funds from Apple. The award will enable Finisar to increase its R&D spending and high-volume production of vertical-cavity surface-emitting lasers (VCSELs). A VCSEL is a type of semiconductor laser diode. The... » read more

Pushing DRAM’s Limits


If humans ever do create a genuinely self-aware artificial intelligence, it may well exhibit the frustration of waiting for data arrive. The access bandwidth of DRAM-based computer memory has improved by a factor of 20x over the past two decades. Capacity increased 128x during the same period. But latency improved only 1.3x, according to Kevin Chang, a researcher at Carnegie Mellon Universit... » read more

The Week In Review: Manufacturing


Chipmakers At this week’s International Wafer-Level Packaging Conference (IWLPC), Samsung disclosed details about its efforts in the panel-level fan-out market. Samsung as well as ASE, Nepes and others are developing a next-generation fan-out technology using a panel-level format. In panel-level fan-out packaging, you can put more die on a panel as compared to a traditional round wafer, w... » read more

Memory Test Challenges, Opportunities


The semiconductor capital equipment market is on fire, and the memory chip test equipment sector is no different. But it is getting much more difficult on the memory side. Memory test vendors are contending with next-generation devices, such as 3D NAND flash memories, HBM2 chips, low-power double-data-rate DRAMs, graphics DRAMs, phase-change memories, magnetoresistive RAMs, and resistive RAM... » read more

← Older posts