tag: SOT

Multi-Faceted Spin Orbit Torque Phenomena in GdCo (Berkeley)
By Technical Paper Link - 09 Oct, 2024 - Comments: 0

A new technical paper titled "Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy" was published by researchers at UC Berkeley and Lawrence Berkeley National Laboratory. The paper states: "Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries g... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more

A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices
By Technical Paper Link - 24 Jun, 2023 - Comments: 0

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Novel Spintronic Neuro-mimetic Device Emulating the LIF Neuron Dynamics w/High Energy Efficiency & Compact Footprints
By Technical Paper Link - 03 Jun, 2022 - Comments: 0

New technical paper titled "Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices" from researchers at Purdue University. Abstract "The capability of emulating neural functionalities efficiently in hardware is crucial for building neuromorphic computing systems. While various types of neuro-mimetic devices have been investigated, it remains challenging to... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
By Technical Paper Link - 28 Feb, 2021 - Comments: 0

ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

MRAM: from STT to SOT, for security and memory
By Technical Paper Link - 30 Apr, 2019 - Comments: 0

Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power applications, requiring a decent level of performance. However, it also have interests for secured applications. The PRESENT cipher is a lightweight cryptographic algorithm targeting ultra... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents
By Technical Paper Link - 31 Mar, 2018 - Comments: 0

ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more

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