tag: SOT-MRAM

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM
By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 
By Technical Paper Link - 30 Jan, 2024 - Comments: 0

A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more

High Performance Memory: Novel Lateral Double Magnetic Tunnel Junction (MTJ) With An Orthogonal Polarizer
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A new technical paper titled "Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory" was published by researchers at Hanyang University. Find the technical paper here. Published November 2022. Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory.... » read more

SOT-MRAM-based CIM architecture for a CNN model
By Technical Paper Link - 09 May, 2022 - Comments: 0

New research paper "In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM", from National Taiwan University, Feng Chia University, Chung Yuan Christian University. Abstract "Recently, numerous studies have investigated computing in-memory (CIM) architectures for neural networks to overcome memory bottlenecks. Because of its low delay, high energ... » read more

SOT-MRAM To Challenge SRAM
By Bryon Moyer - 13 Jan, 2022 - Comments: 1

In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

MRAM Evolves In Multiple Directions
By Bryon Moyer - 11 Mar, 2021 - Comments: 1

Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn't as simple as adding other types of memory. MRAM isn’t an all-things-for-all-applications technology. It needs to be tuned for its intended purpose. MRAMs targeting flash will not do as well targeting SRAMs, and vice vers... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
By Technical Paper Link - 28 Feb, 2021 - Comments: 0

ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

Startup Funding: December 2020
By Jesse Allen - 06 Jan, 2021 - Comments: 1

AI hardware startups were hot in our December startup-funding focus, with two companies landing rounds exceeding $100M and plenty of others seeing investment. Two Chinese EDA companies received funding in a bid to boost the country's semiconductor ecosystem. One company providing control systems for fabs achieved $8M in Series A, and both autonomous driving and electric vehicles pulled in lots ... » read more

Manufacturing Bits: July 21
By Mark LaPedus - 21 Jul, 2020 - Comments: 1

Intel’s next-gen MRAM At the recent 2020 Symposia on VLSI Technology and Circuits, Intel presented a paper on a CMOS-compatible spin-orbit torque MRAM (SOT-MRAM) device. Still in R&D, SOT-MRAM is a next-generation MRAM designed to replace SRAM. Generally, processors integrate a CPU, SRAM and a variety of other functions. SRAM stores instructions that are rapidly needed by the processo... » read more

Neuromorphic Computing Drives The Landscape Of Emerging Memories For Artificial Intelligence SoCs
By Synopsys - 03 Jun, 2020 - Comments: 0

The pace of deep machine learning and artificial intelligence (AI) is changing the world of computing at all levels of hardware architecture, software, chip manufacturing, and system packaging. Two major developments have opened the doors to implementing new techniques in machine learning. First, vast amounts of data, i.e., “Big Data,” are available for systems to process. Second, advanced ... » read more

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