A Field-Free Switching Solution For SOT Magnetic Tunnel Junction Devices

A technical paper titled “Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current” was published by researchers at KU Leuven, ETH Zurich, and IMEC. Abstract: "Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, i... » read more

Novel Spintronic Neuro-mimetic Device Emulating the LIF Neuron Dynamics w/High Energy Efficiency & Compact Footprints

New technical paper titled "Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices" from researchers at Purdue University. Abstract "The capability of emulating neural functionalities efficiently in hardware is crucial for building neuromorphic computing systems. While various types of neuro-mimetic devices have been investigated, it remains challenging to... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

MRAM: from STT to SOT, for security and memory

Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power applications, requiring a decent level of performance. However, it also have interests for secured applications. The PRESENT cipher is a lightweight cryptographic algorithm targeting ultra... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more