中文 English

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB


Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient


Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory


ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

MRAM: from STT to SOT, for security and memory


Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power applications, requiring a decent level of performance. However, it also have interests for secured applications. The PRESENT cipher is a lightweight cryptographic algorithm targeting ultra... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents


ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more