Vertical MoS2 transistors with sub-1-nm gate lengths

Abstract "Ultra-scaled transistors are of interest in the development of next-generation electronic devices. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported, the fabrication of devices with gate lengths below 1 nm has been challenging. Here we demonstrate side-wall MoS2 transistors with an atomically thin channel and a physical gate length of sub-1 nm ... » read more