TaN Nanowires At 300 mm Wafer Scale For Quantum Computing And More


A technical paper titled "Ultra-thin TaN Damascene Nanowire Structures on 300 mm Si Wafers for Quantum Applications" was published by researchers at NY CREATES, United States Air Force Research Laboratory and SUNY Polytechnic Institute. Abstract: "We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm to 3 μm wide, with TaN thi... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Will 7nm And 5nm Really Happen?


Today’s silicon-based finFETs could run out of steam at 10nm. If or when chipmakers move beyond 10nm, IC vendors will require a new transistor architecture. III-V finFETs, gate-all-around FETs, quantum well finFETs, SOI finFETs and vertical nanowires are just a few of the future transistor candidates at 7nm and 5nm. Technically, it’s possible to manufacture the transistor portions of the... » read more

Challenges Mount For Interconnect


By Mark LaPedus There are a plethora of chip-manufacturing challenges for the 20nm node and beyond. When asked what are the top challenges facing leading-edge chip makers today, Gary Patton, vice president of the Semiconductor Research and Development Center at IBM, said it boils down to two major hurdles: lithography and the interconnect. The problems with lithography are well documented.... » read more