Metrology Of Thin Resist For High NA EUVL

One of the many constrains of high numerical aperture extreme ultraviolet lithography (High NA EUVL) is related to resist thickness. In fact, one of the consequences of moving from current 0.33NA to 0.55NA (high NA) is the depth of focus (DOF) reduction. In addition, as the resist feature lines shrink down to 8nm half pitch, it is essential to limit the aspect ratio to avoid pattern collapse. T... » read more

Extracting Intrinsic Mechanical Properties Of Thin Low-Dielectric Constant Materials With iTF Analysis

This white paper focuses on the optimization and use of Bruker’s iTF software package for the extraction of intrinsic (substrate independent) mechanical properties, particularly for thin, low-k materials. These considerations are split into two main parts: Measurement procedure (Section II) and iTF execution (Section III). The former outlines important aspects of acquiring proper experimental... » read more