tag: TMD

Strain Engineering in 2D FETs (UCSB)
By Technical Paper Link - 07 Oct, 2024 - Comments: 0

A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

TFETs: Design and Operation, Including Material Selection and Simulation Methods
By Technical Paper Link - 07 Oct, 2024 - Comments: 0

A new technical paper titled "Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review" was published by researchers at University of Chicago and Argonne National Lab. Abstract "Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transi... » read more

Research Bits: July 16
By Jesse Allen - 16 Jul, 2024 - Comments: 0

Kirigami-inspired mechanical computer Researchers from North Carolina State University developed a kirigami-inspired mechanical computer that uses a complex structure of rigid, interconnected polymer cubes to store, retrieve, and erase data without relying on electronic components. The system uses 1-centimeter plastic cubes, grouped into functional units consisting of 64 interconnected cubes. ... » read more

Research Bits: September 5
By Jesse Allen - 05 Sep, 2023 - Comments: 0

Layered TMD semiconductors Scientists from Tsinghua University investigated fabrication techniques for fabricating and engineering transition metal dichalcogenides (TMDs). By modulating TMDs with various methods, including phase engineering, defect engineering, doping, and alloying, the material class could provide a wide range of alternatives for high-quality layered semiconductors with st... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)
By Technical Paper Link - 05 May, 2023 - Comments: 0

A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

New Method For Determining How 2D Materials Expand (MIT)
By Technical Paper Link - 23 Nov, 2022 - Comments: 0

A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

Nudging 2D semiconductors forward
By Katherine Derbyshire - 16 Sep, 2021 - Comments: 1

The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy