New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)

A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

New Method For Determining How 2D Materials Expand (MIT)

A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors

Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

System Bits: July 9

New quantum computing algorithm Researchers at the University of California, San Diego, have proposed a new algorithm for quantum computing that they believe will speed a particular type of problem…but swifter calculations would come at the cost of greater physical resources devoted to precise timekeeping. The algorithm would be used to conduct a task called an unstructured search. The go... » read more