tag: transition-metal dichalcogenides

2D Semiconductors Inch Forward
By Katherine Derbyshire - 19 Mar, 2026 - Comments: 0

Key Takeaways: Diffusing oxygen into 2D materials can improve adhesion properties. Channel-last processes can preserve most of the traditional gate-all-around process flow. Dual-gate MoS2 FETs with graphene contacts take advantage of layer transfer methods. Transition metal dichalcogenides (TMDs) have come a long way since exfoliated flakes were the state of the art, but the... » read more

Optimizing Oxide Interfaces To Preserve Device Performance in TMDC-based Transistors (imec, ETH Zurich)
By Technical Paper Link - 17 Mar, 2026 - Comments: 0

A new technical paper, "Oxide induced degradation in MoS2 field-effect transistors," was published by researchers at imec and ETH Zurich. Abstract excerpt "Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. This study examines how amo... » read more

Research Bits: Feb. 9
By Jesse Allen - 09 Feb, 2026 - Comments: 0

Computing with heat Researchers from the Massachusetts Institute of Technology (MIT) designed silicon structures that can perform calculations in an electronic device using excess heat instead of electricity. The device was created using a software system that automatically designs a material that can conduct heat in a specific manner. The inverse design technique allowed the researchers to... » read more

Minimizing Optical Loss While Enabling Efficient Phase Modulation in TMD-Based Devices (Nanyang Technological Univ., et al.)
By Technical Paper Link - 12 Jan, 2026 - Comments: 0

A new technical paper titled "Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators" was published by researchers at Nanyang Technological University, CNRS-International-NTU-Thales Research Alliance (CINTRA), University of Chicago, University of Wisconsin-Madison, Chungnam National University, National Institute for Materials Science, MIT, and Singa... » read more

Simulating Atomic Layer Processing Of 2D Materials
By Synopsys - 18 Sep, 2025 - Comments: 0

Integrating 2D materials into sustainable electronic devices presents key challenges, particularly in depositing or etching nanometer-thick layers on high aspect ratio structures. Atomic Layer Etching (ALE) offers atomic-level precision and has demonstrated success in producing atomically thin layers of transition metal dichalcogenides (TMDs) like MoS2. Synopsys has developed an industry-grade ... » read more

The Race To Replace Silicon
By M. Rameez Arif - 24 Jul, 2025 - Comments: 1

For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

Research Bits: Mar. 10
By Jesse Allen - 10 Mar, 2025 - Comments: 0

Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

Ultranarrow Semiconductor WS2 Nanoribbon FETs (Chalmers)
By Technical Paper Link - 29 Jan, 2025 - Comments: 0

A new technical paper titled "Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors" was published by researchers at Chalmers University of Technology. Abstract "Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancem... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)
By Technical Paper Link - 03 Dec, 2024 - Comments: 0

A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Excitonic Phenomena in TMDs (Harvard, Google, Stanford et al.)
By Technical Paper Link - 17 Jul, 2024 - Comments: 0

A new technical paper titled "Dynamical Control of Excitons in Atomically Thin Semiconductors" was published by researchers at Harvard University, Google Research, Stanford University, UC Riverside and others. Abstract "Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and sol... » read more

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