A New Layered Structure With 2D Material That Exhibits A Unique Transfer Of Energy And Charge

A technical paper titled “Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material” was published by researchers at University of Warsaw, Brookhaven National Laboratory, and National Institute for Materials Science (Japan). Abstract: "High light absorption (∼15%) and strong photoluminescence (PL) emission in monolayer (1L... » read more

Research Bits: September 5

Layered TMD semiconductors Scientists from Tsinghua University investigated fabrication techniques for fabricating and engineering transition metal dichalcogenides (TMDs). By modulating TMDs with various methods, including phase engineering, defect engineering, doping, and alloying, the material class could provide a wide range of alternatives for high-quality layered semiconductors with st... » read more

How Band Nesting Can Achieve Near-Perfect Optical Absorption In Just Two Layers Of TMD Materials

A technical paper titled “Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting” was published by researchers at University of Minnesota, University of Notre Dame, and Korea Advanced Institute of Science and Technology (KAIST). Abstract: "Near-perfect light absorbers (NPLAs), with absorbance, λ, of at least 99%, have a wide ... » read more

Overview Of The State Of Semiconducting TMDC Research

A technical paper titled "Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications" was published by researchers at Advanced Microelectronic Center Aachen (AMICA), RWTH Aachen University, and Bergische Universität Wuppertal. Abstract: "Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good charge carrier mobility, ultimat... » read more

Antenna For Nanoscale Light Source By Placing The TMD Outside The Tunnelling Pathway

A technical paper titled "Exciton-assisted electron tunnelling in van der Waals heterostructures" was published by researchers at ETH Zürich, The Barcelona Institute of Science and Technology, Swiss Federal Laboratories for Materials Science and Technology, National Institute for Materials Science, University of Basel, and Institució Catalana de Recerca i Estudis Avançats (ICREA). Abstract:... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD

A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Reducing Contact Resistance in Developing Transistors Based On 2D Materials

A new technical paper titled "WS2 Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study" was published by researchers at National Yang Ming Chiao Tung University. Abstract "Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles ... » read more

Research Bits: March 6

2D TMDs on silicon Engineers at MIT, University of Texas at Dallas, Institute for Basic Science, Sungkyunkwan University, Washington University in St. Louis, University of California at Riverside, ISAC Research, and Yonsei University found a way to grow 2D materials on industry-standard silicon wafers while preserving their crystalline form. Using a new “nonepitaxial, single-crystalline g... » read more

2D Semiconductor Materials Creep Toward Manufacturing

As transistors scale down, they need thinner channels to achieve adequate channel control. In silicon, though, surface roughness scattering degrades mobility, limiting the ultimate channel thickness to about 3nm. Two-dimensional transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are attractive in part because they avoid this limitation. With no out-of-plane dangling bonds and at... » read more

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)

A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

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