tag: transition-metal dichalcogenides

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

New Materials Open Door To New Devices
By Katherine Derbyshire - 21 Jul, 2022 - Comments: 0

Integrating 2D materials into conventional semiconductor manufacturing processes may be one of the more radical changes in the chip industry’s history. While there is pain and suffering associated with the introduction of any new materials in semiconductor manufacturing, transition metal dichalcogenides (TMDs) support a variety of new device concepts, including BEOL transistors and single-... » read more

Interfacial ferroelectricity in marginally twisted 2D semiconductors
By Technical Paper Link - 08 Mar, 2022 - Comments: 0

Abstract "Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of tw... » read more

2D Semiconductors Make Progress, But Slowly
By Katherine Derbyshire - 28 Feb, 2022 - Comments: 2

Researchers are looking at a variety of new materials at future nodes, but progress remains slow. In recent years, 2D semiconductors have emerged as a leading potential solution to the problem of channel control in highly scaled transistors. As devices shrink, the channel thickness should shrink proportionally. Otherwise, the gate capacitance won’t be large enough to control the flow of cu... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

The Good And Bad Of 2D Materials
By Katherine Derbyshire - 27 Feb, 2019 - Comments: 0

Despite years of warnings about reaching the limits of silicon, particularly at leading-edge process nodes where electron mobility is limited, there still is no obvious replacement. Silicon’s decades-long dominance of the integrated circuit industry is only partly due to the material’s electronic properties. Germanium, gallium arsenide, and many other semiconductors offer superior mobili... » read more

System Bits: Oct. 11
By Ed Sperling - 11 Oct, 2016 - Comments: 0

Carbon Is So 2015 Researchers at MIT have created a supercapacitor that relies on a material other than carbon. This new class of materials, called metal-organic frameworks (MOFs), are a porous and sponge-like, according to MIT, tthereby providing a much larger surface area than carbon. As with most things electrical, more surface area is essential for superconductors. The problem the re... » read more

Power/Performance Bits: May 24
By Jesse Allen - 24 May, 2016 - Comments: 0

Reducing MRAM chip area Researchers from Tohoku University developed a technology to stack magnetic tunnel junctions (MTJ) directly on the via without causing deterioration to its electric/magnetic characteristics. The team focused on reducing the memory cell area of spin-transfer torque magnetic random access memory (STT-MRAM) in order to lower manufacturing costs, making them more compe... » read more

Manufacturing Bits: Feb. 16
By Mark LaPedus - 16 Feb, 2016 - Comments: 0

Monoxide chips Two-dimensional (2D) materials are gaining steam in the R&D labs. The 2D materials could enable a new class of field-effect transistors (FETs), but the technology isn’t expected to appear until sometime in the next decade. The 2D materials include graphene, boron nitride and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is gaining inter... » read more

One-On-One: Aaron Thean
By Mark LaPedus - 22 Jan, 2015 - Comments: 0

Semiconductor Engineering sat down to discuss process technology, transistor trends and other topics with Aaron Thean, vice president of process technologies and director of the logic devices R&D program at Imec. SE: Chipmakers are ramping up the 16nm/14nm logic node, with 10nm and 7nm in R&D. What’s the current timeline for 10nm and 7nm? Thean: 10nm is on its way. We will see r... » read more

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