tag: Ulsan National Institute of Science and Technology

Power/Performance Bits: Sept. 25
By Jesse Allen - 25 Sep, 2018 - Comments: 0

Heat transfer in 2D materials Engineers at the University of Illinois developed a way to reduce overheating in nanoelectronics that incorporate 2D components by adding another layer to the structure. "In the field of nanoelectronics, the poor heat dissipation of 2D materials has been a bottleneck to fully realizing their potential in enabling the manufacture of ever-smaller electronics whil... » read more

Manufacturing Bits: June 12
By Mark LaPedus - 12 Jun, 2018 - Comments: 0

Elastic diamonds A group has developed a way to make elastic diamonds, enabling tiny diamond needles that can flex and stretch. Ulsan National Institute of Science and Technology (UNIST), the Massachusetts Institute of Technology (MIT), the City University of Hong Kong and Nanyang Technological University have developed a process that enables elastic diamonds. Elastic diamonds could one day... » read more

Power/Performance Bits: May 9
By Jesse Allen - 09 May, 2017 - Comments: 0

Integrated battery and solar cell Researchers from the Ulsan National Institute of Science and Technology (UNIST) in Korea developed a single-unit, photo-rechargeable portable power source based on miniaturized crystalline Si photovoltaics (c-Si PVs) and printed solid-state lithium-ion batteries (LIBs). The device uses a thin-film printing technique, in which the solid-state LIB is directly ... » read more

Power/Performance Bits: April 11
By Jesse Allen - 11 Apr, 2017 - Comments: 0

High-efficiency silicon photodetector Electrical engineers at the University of California, Davis, and W&WSens Devices, Inc. built a new type of high-efficiency photodetector that could be monolithically integrated with silicon electronics. The new detector uses tapered holes in a silicon wafer to divert photons sideways, preserving the speed of thin-layer silicon and the efficiency o... » read more

Power/Performance Bits: Jan. 10
By Jesse Allen - 10 Jan, 2017 - Comments: 0

Antiferromagnetic magnetoelectric RAM Researchers at Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Swiss Nanoscience Institute, and the University of Basel developed a concept for a new, low power memory chip. In particular, the group focused on finding an alternative to MRAM using magnetoelectric antiferromagnets, which are activated by an electrical voltage rather than by a current. "... » read more

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