tag: Ulsan National Institute of Science and Technology

Research Bits: Mar. 9
By Jesse Allen - 09 Mar, 2026 - Comments: 0

Low noise clock generator Researchers from Ulsan National Institute of Science and Technology (UNIST) designed a low power semiconductor circuit capable of generating high-quality clock signals with significantly reduced noise levels. The injection-locked clock multiplier (ILCM) circuit uses a simplified design based on a ring voltage-controlled oscillator (VCO). It integrates a frequency t... » read more

Research Bits: Feb. 3
By Jesse Allen - 03 Feb, 2026 - Comments: 0

Artificial synapse Researchers from Ulsan National Institute of Science and Technology (UNIST) designed a biodegradable, energy efficient artificial synapse that uses a layered structure made from naturally-derived polymers that break down naturally within 16 days in soil. "The device is built like a tiny sandwich, with ion-active layers separated by an ion-binding layer made from cellulose... » read more

Research Bits: Jan. 20
By Jesse Allen - 20 Jan, 2026 - Comments: 0

ALD for Ru wiring Researchers from Ulsan National Institute of Science and Technology (UNIST), Hongik University, and Tanaka Precious Metal Technologies developed an atomic layer deposition (ALD) process for creating chip interconnects using a ruthenium (Ru) precursor with a thermal stability up to 400 °C. The high-temperature ALD process can produce dense, high-quality Ru films without deg... » read more

Research Bits: Nov. 18
By Jesse Allen - 18 Nov, 2025 - Comments: 0

Rubbery CMOS Researchers at University of Illinois Urbana-Champaign, University of Houston, Ulsan National Institute of Science and Technology, Pusan National University, and Southeast University designed fully stretchable complementary integrated circuits composed of both elastic n-type and p-type transistors that provide the same functionality as conventional CMOS while retaining stable elec... » read more

Research Bits: Nov. 10
By Jesse Allen - 10 Nov, 2025 - Comments: 0

Post-doping plasma for DRAM capacitors Researchers from Ulsan National Institute of Science and Technology (UNIST), Pohang University of Science and Technology (POSTECH), and Seoul National University of Science and Technology developed a post-doping plasma (PDP) process to improve the performance of DRAM capacitors. Aluminum-doped titanium dioxide (Al-doped TiO2) is a promising material fo... » read more

Research Bits: Oct. 28
By Jesse Allen - 28 Oct, 2025 - Comments: 0

Mushroom memristors Researchers from The Ohio State University found that common edible mushrooms can be grown and trained to act as organic memristors. The team cultured samples of shiitake and button mushrooms, dehydrated them once mature to ensure long-term viability, connected them to special electronic circuits, and then electrocuted them at various voltages and frequencies. “Myce... » read more

Chip Industry Week in Review
By The SE Staff - 24 Oct, 2025 - Comments: 0

Retaliations and countermoves leading up to planned trade talks between the U.S. and China led experts to wonder, 'Who's winning?' New activity on this front: China issued questionnaires to some U.S. semiconductor firms as part of an anti-dumping probe, demanding detailed data on sales, profit margins, logistics costs and Chinese customer names for analog chips. The probe appears aimed at ... » read more

Research Bits: Oct. 21
By Jesse Allen - 21 Oct, 2025 - Comments: 0

Direct patterning with UV cross-linking Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, University of Chemistry and Technology Prague, and Sogang University developed a technique that enables the direct patterning of 2D semiconductor materials onto substrates without the use of toxic solvents. The process involves disp... » read more

Research Bits: August 5
By Jesse Allen - 05 Aug, 2025 - Comments: 0

Non-volatile RF switches Researchers from Ulsan National Institute of Science and Technology (UNIST) designed non-volatile RF switches based on vanadium oxide (VOx) for high-frequency bands used in next-generation wireless communications like 6G. The RF switch uses a memristor structure that enables it to operate and maintain its set state without consuming standby power. Additionally, the ... » read more

Scalable Approach For Fabricating Sub-10nm Nanogaps
By Technical Paper Link - 07 Apr, 2025 - Comments: 0

A new technical paper titled "A progressive wafer scale approach for Sub-10 nm nanogap structures" was published by researchers at Seoul National University, Chung-Ang University, Mohammed VI Polytechnic University and Ulsan National Institute of Science and Technology. "We have advanced the atomic layer lithography method into an efficient, scalable approach for fabricating sub-10 nm nanoga... » read more

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