tag: University of Tokyo

The Evolution Of High-Level Synthesis
By Brian Bailey - 27 Aug, 2020 - Comments: 3

High-level synthesis is getting yet another chance to shine, this time from new markets and new technology nodes. But it's still unclear how fully this technology will be used. Despite gains, it remains unlikely to replace the incumbent RTL design methodology for most of the chip, as originally expected. Seen as the foundational technology for the next generation of EDA companies around the ... » read more

Manufacturing Bits: Aug. 18
By Mark LaPedus - 18 Aug, 2020 - Comments: 0

Quantum Internet The U.S. Department of Energy (DOE) recently unveiled a strategy to develop a quantum Internet in the United States. DOE’s 17 National Laboratories will serve as the backbone of the quantum Internet, which will rely on the laws of quantum mechanics to control and transmit information over a network. Currently in its initial stages of development, the quantum Internet coul... » read more

Manufacturing Bits: May 26
By Mark LaPedus - 26 May, 2020 - Comments: 0

7-level nanosheets The 2020 Symposia on VLSI Technology & Circuits for the first time will be held as a virtual conference. The event, to be held from June 15-18, is organized around the theme “The Next 40 Years of VLSI for Ubiquitous Intelligence.” Among the papers at the event include advanced nanosheet transistors, 3D stacked memory devices and even an artificial iris. At the ... » read more

Power/Performance Bits: March 31
By Jesse Allen - 31 Mar, 2020 - Comments: 0

Tellurium transistors Researchers from Purdue University, Washington University in St Louis, University of Texas at Dallas, and Michigan Technological University propose the rare earth element tellurium as a potential material for ultra-small transistors. Encapsulated in a nanotube made of boron nitride, tellurium helps build a field-effect transistor with a diameter of two nanometers. �... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Power/Performance Bits: Dec. 31
By Jesse Allen - 31 Dec, 2019 - Comments: 0

Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

Power/Performance Bits: Aug. 13
By Jesse Allen - 13 Aug, 2019 - Comments: 0

Smartphone virus scanner Scientists at the University of Tokyo built a new type of virus scanner for smartphones: to detect diseases, not malware. The handheld, portable device uses a smartphone to help scan biological samples for influenza virus. The virus scanner is about the size of a brick, with a slot to position a smartphone such that its camera looks through a lens. Inside the device... » read more

Manufacturing Bits: July 30
By Mark LaPedus - 30 Jul, 2019 - Comments: 0

Scanning nanopore microscopes ETH Zurich has developed a new microscopy technique that can detect and analyze signals between individual cells in living organisms. The technology, called a force-controlled scanning nanopore microscope, is a new way to look at the behavior of individual cells. So far, researchers have tested the technology on rat brain tissue. It could one day be used to pro... » read more

Power/Performance Bits: July 10
By Jesse Allen - 10 Jul, 2019 - Comments: 0

Wearable heart monitoring Researchers at the University of Texas at Austin developed a lightweight, stretchy heart monitoring patch that can be worn externally. Along with being easy to wear, the graphene-based 'e-tattoo' is more accurate than existing electrocardiograph machines, according to the team. The e-tattoo measures cardiac health using both electrocardiograph and seismocardiograph... » read more

Power/Performance Bits: June 25
By Jesse Allen - 25 Jun, 2019 - Comments: 0

Improving IGBTs Researchers at the University of Tokyo developed a power switching device that surpasses previous performance limits, showing that there may still be gains ahead for the silicon-based devices, which have been thought to be approaching their limits. The team's improved insulated gate bipolar transistor (IGBT) used a scaling approach, and simulations showed that downscaling pa... » read more

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