Power Semiconductor Devices: Thermal Management and Packaging

A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

48V Applications Drive Power IC Package Options

The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more