Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor


A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

Metrology Challenges For Gate-All-Around


Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

3D NAND Metrology Challenges Growing


3D NAND vendors face several challenges to scale their devices to the next level, but one manufacturing technology stands out as much more difficult at each turn—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems and ensure yields for all chip types. In the case of 3D NAND, the metrology tools are becoming more expensive at each iteration... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Measuring FinFETs Will Get Harder


The industry is gradually migrating toward chips based on finFET transistors at 16nm/14nm and beyond, but manufacturing those finFETs is proving to be a daunting challenge in the fab. Patterning is the most difficult process for finFETs. But another process, metrology, is fast becoming one of the biggest challenges for the next-generation transistor technology. In fact, [getkc id="252" kc_n... » read more