A Step Towards Eliminating The Von-Neumann Bottleneck By Co-locating Photonic Computing Elements And Non-Volatile Memory 


A technical paper titled “Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory” was published by researchers at Hewlett Packard Enterprise.

“We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters,” states the paper.

Find the technical paper here. Published: May 2023 (preprint).

Cheung, Stanley, Di Liang, Yuan Yuan, Yiwei Peng, Yingtao Hu, Geza Kurczveil, and Raymond G. Beausoleil. “Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory.” arXiv preprint arXiv:2305.17578 (2023).

Related Reading
Flash Memory Knowledge Center 
Ferroelectric Memories: The Middle Ground
Ferroelectric memories fall somewhere between DRAM and non-volatile flash memory and potentially can provide a necessary intermediate step.

Leave a Reply

(Note: This name will be displayed publicly)