Research Bits: June 15


NAND in space Researchers from Georgia Institute of Technology and Pennsylvania State University built ferroelectric NAND flash memory chips that can withstand up to 30 times higher radiation levels compared to conventional NAND. “If you send traditional flash memory to space, the radiation interacting with flash memory’s trapped electric charge can easily corrupt the data,” said Asif... » read more

Flash Getting Stacked High-Bandwidth Version


Key takeaways: A new HBF 3D flash stack is similar to HBM for use in AI processing. HBF capacity will be much higher, allowing static storage of AI model weights, with optimized read speed. Samples are due out later this year, with accelerators featuring it coming out next year. AI inference using modern models requires billions of parameters, and moving them to where they c... » read more

AI Demand Resets Memory Market Priorities, Tightening NOR Flash Availability


The memory sector is entering a major turning point as the industry adjusts to what many now call the AI memory supercycle. Although most headlines focus on high bandwidth memory (HBM) and advanced NAND fueling the rapid expansion of AI data centers, a quieter but important consequence is emerging: shifts in production priorities are beginning to affect the supply of NOR flash across a wide ra... » read more

Cryogenic Etch: A Key Enabler Of 3D NAND


Increased storage needs at the edge and in the cloud are fueling rising demand for higher-capacity flash memory across multiple applications. Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance gains. With each new generation, NAND suppliers deliver 50% faster read/write speeds, 40% greater bit density, lower latency, ... » read more

Research Bits: Oct. 21


Direct patterning with UV cross-linking Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, University of Chemistry and Technology Prague, and Sogang University developed a technique that enables the direct patterning of 2D semiconductor materials onto substrates without the use of toxic solvents. The process involves disp... » read more

Why 3D NAND Layers Bend (And How To Prevent It)


3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D NAND devices is tier bending and tier collapse. These undesirable conditions can be caused by a combination of factors. Using the virtual Design of Experiment (DOE) capabilities in SEMulator... » read more

In-NAND Self-Encryption Architecture In A 4D-NAND Structure (DGIST, Georgia Tech Et Al.)


A new technical paper titled "FlashVault: Versatile In-NAND Self-Encryption with Zero Area Overhead" was published by researchers at DGIST, Georgia Tech, POSTECH, Samsung Electronics, Virginia Tech, and Korea University. Abstract "We present FlashVault, an in-NAND self-encryption architecture that embeds a reconfigurable cryptographic engine into the unused silicon area of a state-of-the-ar... » read more

Memory Fundamentals For Engineers


Memory is one of a very few elite electronic components essential to any electronic system. Modern electronics perform extraordinarily complex duties that would be impossible without memory. Your computer obviously contains memory, but so does your car, your smartphone, your doorbell camera, your entertainment system, and any other gadget benefiting from digital electronics. This eBook prov... » read more

How New Diagnostic Data And Operations Equip Flash Memory ICs For The Demands Of Automotive Functional Safety Standards


Automotive systems OEMs are starting to demand a new breed of flash ICs which can support the requirements of functional safety design at the system level better than previous generations of devices. This article studies the mode of operation of conventional NOR flash ICs, and explains the features that new automotive serial flash products will need to offer if they are to fully support system ... » read more

SRAM’s Role In Emerging Memories


Experts at the Table — Part 3: Semiconductor Engineering sat down to talk about AI, the latest issues in SRAM, and the potential impact of new types of memory, with Tony Chan Carusone, CTO at Alphawave Semi; Steve Roddy, chief marketing officer at Quadric; and Jongsin Yun, memory technologist at Siemens EDA. What follows are excerpts of that conversation. Part one of this conversation can be ... » read more

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