Current methods of wafer cutting for silicon carbide (SiC) substrates are prohibiting high volume production.
Silicon carbide (SiC) is a wideband gap semiconductor material that has huge potential to enrich our lives by enabling better technology with improved connectivity and efficiency. It offers many advantages over common silicon (Si) for power applications as it can be doped much higher than silicon to achieve optimal blocking voltage. In addition, SiC high thermal conductivity characteristic enables power devices to operate at higher temperature and faster frequency environments. Many types of devices are being developed today using this material, and soon the world’s leading electronic manufacturers will be producing SiC products on a large scale for many high power applications. To date, there have been no mature cutting technologies that can handle this material for high-volume manufacturing.
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