Week In Review: Manufacturing, Test


Chipmakers The IC industry once had several leading-edge vendors that invested and built new fabs. But over time, the field has narrowed due to soaring costs and a dwindling customer base. In 1994, the share of semiconductor industry capital spending held by the top five companies was 25%, according to IC Insights. This meant that a number of companies invested and built new fabs during the... » read more

Making Random Variation Less Random


The economics for random variation are changing, particularly at advanced nodes and in complex packaging schemes. Random variation always will exist in semiconductor manufacturing processes, but much of what is called random has a traceable root cause. The reason it is classified as random is that it is expensive to track down all of the various quirks in a complex manufacturing process or i... » read more

What’s The Best Advanced Packaging Option?


As traditional chip designs become more unwieldy and expensive at each node, many IC vendors are exploring or pursuing alternative approaches using advanced packaging. The problem is there are too many advanced packaging options on the table already, and the list continues to grow. Moreover, each option has several tradeoffs and challenges, and all of them are still relatively expensive. ... » read more

Process To Produce High Aspect Ratio Electroplated Copper Pillars On 300 mm Wafers


This work provides details of a complete and partially optimized process to manufacture high aspect ratio copper pillars with heights of up to 80 µm on 200 and 300 mm wafers. Across wafer uniformity data for all materials and process steps are given. Results will show excellent resist adhesion on copper and electroplating durability. Cross sectional SEM analysis of resist and electroplated pil... » read more

The Race To Next-Gen 2.5D/3D Packages


Several companies are racing each other to develop a new class of 2.5D and 3D packages based on various next-generation interconnect technologies. Intel, TSMC and others are exploring or developing future packages based on one emerging interconnect scheme, called copper-to-copper hybrid bonding. This technology provides a way to stack advanced dies using copper connections at the chip level,... » read more

External Resistance Reduction By Nanosecond Laser Anneal In Si/SiGe CMOS Technology


Authors: 1Oleg Gluschenkov, 1Heng Wu, 1Kevin Brew, 2Chengyu Niu, 1Lan Yu, 1Yasir Sulehria, 1Samuel Choi, 22Curtis Durfee, 1James Demarest, 1Adra Carr, 3Shaoyin Chen, 3Jim Willis, 3Thirumal Thanigaivelan, 1Fee-li Lie, 2Walter Kleemeier, and 1Dechao Guo 1IBM Research, 257 Fuller Road, Albany, NY 12203, USA, email: [email protected] 2GLOBALFOUNDRIES Inc., Albany, NY, USA, 3ULTRATECH, a division ... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

On The Cusp Of 5G


Carriers and chipmakers are celebrating the rollout of the first standards-compliant commercial 5G services. "We are, officially in the era of 5G," said John Smee, vice president of engineering at Qualcomm at the recent 5G Summit at IEEE's International Microwave Symposium (IMS) in Boston. Movement is happening on the commercial end. Major U.S. carriers Verizon, AT&T and Sprint have set ... » read more

Advanced Packaging Options Increase


Designing, integrating and assembling heterogeneous packages from blocks developed at any process node or cost point is proving to be far more difficult than expected, particularly where high performance is one of the main criteria. At least part of the problem is there is a spectrum of choices, which makes it hard to achieve economies of scale. Even where there is momentum for a particular ... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

← Older posts