ALD Tungsten Solves Capacity Challenges in 3D NAND Device Manufacturing

ALD (atomic layer deposition) controls specific reactant molecules precisely within each cycle, unlike CVD


Our increasingly connected and ever “smarter” world generates increasing amounts of data, putting pressure on manufacturers who face new technical challenges in delivering the increasing capacity required for processing and storage. The ALD Tungsten process is helping 3D NAND manufacturers overcome the technical challenges of producing memory chips with higher storage capacity.

3D NAND applications
3D NAND is a type of non-volatile memory, which means it holds onto data when power is turned off. 3D NAND is found in phones, tablets, PCs and memory sticks, as well as in cars and enterprise servers.

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