A new technical paper titled “On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices” was published by researchers at Global TCAD Solutions, Igor Sikorsky Kyiv Polytechnic Institute, INSA Lyon, and NaMLab.
“Here, we promote an ambipolar Schottky-based ferroelectric transistor (AS-FeFET) as an alternative design. We demonstrate that such devices—owing to their ambipolar nature and thus the ability to source both types of carriers—exhibit MWs that are consistently ∼ 40%–60% larger than conventional devices for the same programming conditions, ” states the paper.
Find the technical paper here. September 2024.
M. Thesberg et al., “On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3459878.
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