The State Of The EDA Industry In 2024


In what has become a yearly custom, I recently spoke to Jay Vleeschhouwer, Managing Director of Griffin Securities, for an update on his view of the state of the electronic design automation (EDA) industry. My inquiries were based on his presentation at the 2024 Design Automation Conference (DAC). With his long background as an informed EDA industry follower, I knew it would be an enlightening ... » read more

Tuning Design And Process For High-NA EUV Stitching


By Kevin Lucas and James Ban Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, see figure 1. The lithography patterning at a stitching boundary between two mask exposures will be affected by additional process variation than are encountered in ... » read more

Metal-Oxide-Metal Capacitor Simulation And Modeling By Virtual Fabrication


Metal-Oxide-Metal (MOM) capacitors are passive radio frequency (RF) capacitive devices that are a common component in semiconductor logic chips [1]. A SPICE model of a MOM capacitor is typically used by designers during the design and performance evaluation of logic chip RF circuitry. Traditionally, it may take at least 3 months from the completion of the design layout, wafer fabrication, final... » read more

Luminary Panel Sees Multi-Beam Mask Writers And Curvilinear Masks Key To 193i And EUV


Attendance was up and the mood was optimistic at this year’s SPIE Photomask and EUV conference held September 29 through October 3, 2024. The optimism was apparent as well for multi-beam mask writers and curvilinear masks during the eBeam Initiative’s 15th annual reception and meeting held on October 1. In the eBeam Initiative’s annual Luminaries survey, 93% of those surveyed said that pu... » read more

Revolutionizing IC Packaging With High-Density RDL Technology


The demand for high-performance devices, particularly in AI, HPC, and data centers, has surged dramatically in the ever-evolving landscape of integrated circuit technology. This demand has been further accelerated by the COVID-19 pandemic, pushing the boundaries of silicon technology to its limits. Enter Amkor’s S-SWIFT, a packaging solution designed to address these challenges and revolution... » read more

Multi-Tier Die Stacking Enables Efficient Manufacturing


Advanced packaging is currently facing a critical challenge to increase manufacturing efficiency without sacrificing device performance. Vertical integration techniques, such as multi-tier die stacking and hybrid bonding, enable increased integration density, therefore improving yield of high-quality devices. However, these highly precise processes require significant attention to defectivity... » read more

The Growing Imperative Of Hardware Security Assurance In IP And SoC Design


In an era where technology permeates every aspect of our lives, the semiconductor industry serves as the backbone of innovation. From IoT devices to data centers, every piece of technology relies on integrated circuits (ICs) such as intellectual property (IP) cores and system on chips (SoCs). As these technologies become increasingly pervasive, the importance of hardware security assurance in t... » read more

Novel Molded FCBGA Package Platform For Highly Reliable Automotive Applications


The conventional flip chip ball grid array (FCBGA) package platform has wide industry usage and provides high electrical performance. However, as high performance requirements increased, it encounters significant challenges. FCBGA packages frequently encounter underfill cracks after long term reliability or harsh reliability test conditions for automotive devices. Figure 1 shows the typical und... » read more

Reducing Transistor Capacitance At The 5nm Node Using A Source/Drain Contact Recess


In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One potential way to reduce this parasitic capacitance is to add a source/drain contact (CT) recess step when building the source/drain metal structure. However, this additional structure can potentially increase the source/drain to via resistance. Using... » read more

Legacy Process Nodes Are Critical To Many Industries


As the semiconductor industry continues to push the boundaries of innovation with advanced nodes, it is easy to overlook the critical role that ICs manufactured at legacy process nodes play in our everyday lives. While the spotlight often shines on the leading-edge advancements of 5nm technology and below, it’s the mature nodes, those above 28nm and even above 130nm, that are the unsung ch... » read more

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