category: Blogs – MD

category: IoT, Security & Automotive

The New Mobility Era
By Kathryn Ta - 26 Jun, 2012 - Comments: 0

By Kathryn Ta Transistors are the fundamental building blocks out of which all modern electronic devices are built. Invented in the early 1950s, transistors are the semiconductor switches that control and amplify electronic signals. As demand has grown over the years for greater performance from these devices, chipmakers have responded by packing wafers with twice as many of the transistors th... » read more

Bucket Lists
By Ed Sperling - 26 Jun, 2012 - Comments: 0

At 130nm, the introduction of copper interconnects, 300mm wafers and low-k dielectrics left the entire supply chain breathless. There had never been as many changes at a single process node in the history of semiconductors. At 28nm, the number of changes will pale compared to what’s necessary at 20nm, and that will pale to what’s required at 14nm. But unlike 130nm, when most of those cha... » read more

What’s ST’s FD-SOI Technology All About?
By Various Writers - 22 Jun, 2012 - Comments: 0

As I blogged here on SemiMD last week, STMicroelectronics has announced that to supplement in-house production at their fab in Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices.  ST will also open access to its FD-SOI technology to GlobalFoundries’ other customers.  High-volume manufacturing will kick off with ST-Ericsson’s ... » read more

The Resolution Limit of Hard Drive Manufacturing
By Chris Mack - 20 Jun, 2012 - Comments: 0

In lithography, pushing the limits of resolution is what we do.  These efforts tend to get a lot of press.  After all, the IC technology nodes are named after the smallest nominal dimensions printed with lithography (though the marketing folks who decide whether the next generation will be called the 16-nm or 14-nm node don’t care much about the opinions of lithographers).  And the looming... » read more

GloFo to Fab 28/20nm FD-SOI for ST; ST Tech Open to GF Customers
By Various Writers - 15 Jun, 2012 - Comments: 0

Two big pieces of news have recently been announced by STMicroelectronics: to supplement in-house production at Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices; ST will open access to its FD-SOI technology to GlobalFoundries’ other customers. The high-volume manufacturing will kick off with ST-Ericsson’s ARM-based 2... » read more

Breaking the Barrier Again: Fab Equipment Spending Up in 2012; in 2013 to Reach an All-Time Record High
By Christian Dieseldorff - 11 Jun, 2012 - Comments: 0

Strong Improvement also Seen in Fab Construction By Christian Gregor Dieseldorff, SEMI Industry Research & Statistics (June 1, 2012) Breaking the barrier into positive growth for 2012, the end-of-May edition of the World Fab Forecast shows improved growth in fab equipment spending this year — at US$ 39.5 billion, a two percent year-over-year (YoY) increase.  For 2013, fab equipment... » read more

Aloha Lithography!
By Chris Mack - 10 Jun, 2012 - Comments: 0

An excuse to travel to Hawaii?  You don’t have to ask me twice.  Especially if it is the Big Island, my favorite of the Hawaiian isles.  My excuse this time?  The 3-beams conference, also called triple-beams, EIPBN, or occasionally (rarely) the International Conference on Electron, Ion and Photon Beam Technology & Nanofabrication. The conference was held last week (May 29 – June ... » read more

Chenming Hu: SOI Can Empower New Transistors to 10nm and beyond
By Various Writers - 30 May, 2012 - Comments: 0

The following is a special guest post by Dr. Chenming Hu, TSMC Distinguished Professor at UC Berkeley. He and his team published seminal papers on FinFETs (1999) and UTB-SOI (2000). This post first appeared as part of the Advanced Substrate News special edition on FD-SOI industrialization.  ~~ The good, old MOSFET is nearing its limits. Scaling issues and dopant-induced variations ... » read more

Bigger Shifts Ahead
By Ed Sperling - 29 May, 2012 - Comments: 0

At 130nm the manufacturing portion of the semiconductor industry struggled with copper interconnects, 300mm wafers and immersion lithography. At 20nm and 14nm it will have to grapple with double, triple and possibly even quadruple patterning, new gate structures, the usual increases in process variation, far more expensive designs, complex challenges in attaining reasonable yields and in connec... » read more

Soitec’s Wafer Roadmap for Fully Depleted Planar and 3D/FinFET
By Various Writers - 24 May, 2012 - Comments: 0

The following is a special guest post by Steve Longoria, Senior VP of Worldwide Business Development at Soitec.  It first appeared as part of the Advanced Substrate News special edition on FD-SOI industrialization. ~~ Today’s semiconductor industry is moving through several challenging transitions that are creating a significant opportunity for Soitec to bring incremental value to th... » read more

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