Evaluation Of The Impact Of Source Drain epi Implementation On Logic Performance Using Combined Process And Circuit Simulation


In this paper, we explore an end-to-end solution using SEMulator3D to address the need to include process variation effects in circuit simulation. For the first time, we couple SEMulator3D with BSIM compact modeling to evaluate process variation impacts on circuit performance. The process integration goal of the study was to optimize contacts and spacer thickness of advanced-node FinFETs in ter... » read more

Manufacturing Bits: Feb. 16


Hybrid bonding consortium for packaging A*STAR’s Institute of Microelectronics (IME) and several companies have formed a new consortium to propel the development of hybrid bonding technology for chip-packaging applications. The group, called the Chip-to-Wafer (C2W) Hybrid Bonding Consortium, includes A*STAR’s IME organization, Applied Materials, ASM Pacific, Capcon, HD MicroSystems, ONT... » read more

Week In Review: Manufacturing, Test


Chipmakers The U.S. Semiconductor Industry Association (SIA) and several chip executives have sent a joint letter to President Biden, urging the administration to include substantial funding for semiconductor manufacturing and research in the U.S. As reported, the share of global semiconductor manufacturing capacity in the U.S. has decreased from 37% in 1990 to 12% today. “Semiconductors pow... » read more

Manufacturing Bits: Feb. 8


Metalens for AR/VR The Harvard John A. Paulson School of Engineering and Applied Sciences has developed a new lens technology for use in next-generation virtual and augmented reality systems. Researchers have developed a so-called metalens technology. The two-millimeter achromatic metalens is capable of focusing the RGB (red, green, blue) colors at once without any aberrations. Today, s... » read more

Week In Review: Manufacturing, Test


OEMs and chipmakers In recent times, automotive companies have been impacted by chip shortages, forcing vendors to temporarily shutter their plants. OEMs are experiencing manufacturing disruptions due to semiconductor shortages as some semiconductor foundries allocate production, according to IDC. "Semiconductor content growth in vehicles continues to outpace vehicle unit sales growth, with gr... » read more

Manufacturing Bits: Feb. 2


Capacitor-less DRAM At the recent 2020 International Electron Devices Meeting (IEDM), Imec presented a paper on a novel capacitor-less DRAM cell architecture. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. DRAM itself is based on a one-transistor, one-capacito... » read more

Week In Review: Manufacturing, Test


Packaging and test Intel has invested an additional $475 million in its chip assembly and test manufacturing facility in the Saigon Hi-Tech Park (SHTP) in Vietnam. This takes Intel’s total investment in the Vietnam facility to $1.5 billion. The site assembles and tests Intel’s 5G products and processors. TSMC recently announced a huge increase in capital spending for 2021. A large perce... » read more

The Good, Bad And Unknowns Of Flexible Devices


Flexible hybrid electronics are beginning to proliferate in consumer, medical, and industrial applications due to their comparatively low weight, thin profile, and the ability to literally bend the rules of design. Open any smart phone today and you're likely to find one or more of these flexible boards. Unlike standard printed circuit boards, FHE devices are printed using a combination of r... » read more

Manufacturing Bits: Jan. 26


EU FIB project The European Union (EU) has launched a new project to develop next-generation structures and materials using focused ion beam (FIB) systems. The EU project, dubbed Focused Ion Technology for Nanomaterials or FIT4NANO, is spearheaded by the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) organization. The project aims to bring European researchers and companies together to develop... » read more

New Transistor Structures At 3nm/2nm


Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

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