Chip Industry Technical Paper Roundup: August 15


New technical papers added to Semiconductor Engineering’s library this week. [table id=128 /] More Reading Technical Paper Library home » read more

Research Bits: August 15


Using noise for spintronics Researchers from the Institute for Basic Science built a vertical magnetic tunneling junction device by sandwiching a few layers of vanadium in tungsten diselenide (V-WSe2), a magnetic material, between top and bottom graphene electrodes to create high-amplitude Random Telegraph Noise (RTN) signals. Through the resistance measurement experiments using these devic... » read more

Chip Industry’s Technical Paper Roundup: August 9


New technical papers recently added to Semiconductor Engineering’s library: [table id=124 /] More Reading Technical Paper Library home » read more

Research Bits: Aug. 7


Stretchy semiconductors Researchers from Pennsylvania State University, University of Houston, Southeast University, and Northwestern University are working towards fully flexible electronics. “Such technology requires stretchy elastic semiconductors, the core material needed to enable integrated circuits that are critical to the technology enabling our computers, phones and so much more,... » read more

Research Bits: August 1


Thinner, tougher heat flux sensors Researchers from the Department of Physics at the University of Tokyo have designed a heat flux sensor that can measure heat flux — the amount of heat that passes through a material — using a manufacturable, flexible thin film with circuits etched in a way that increases the anomalous Nernst effect (ANE). ANE turns heat into an electrical signal using ... » read more

Chip Industry’s Technical Paper Roundup: August 1


New technical papers recently added to Semiconductor Engineering’s library: [table id=39 /] More Reading Technical Paper Library home » read more

Research Bits: July 24


Protons improve ferroelectric memory Researchers from King Abdullah University of Science and Technology (KAUST), Qingdao University, and Zhejiang University developed a method to produce multiple phase transitions in ferroelectric materials, which could increase storage capacity for neuromorphic memory. The approach uses proton-mediation of the ferroelectric material indium selenide. The r... » read more

Chip Industry’s Technical Paper Roundup: July 24


New technical papers recently added to Semiconductor Engineering’s library: [table id=119 /] More Reading Technical Paper Library home » read more

Research Bits: July 18


Miniaturized ferroelectric FETs Researchers from the University of Pennsylvania, Hanyang University, King Abdulaziz University, King Abdullah University of Science and Technology, and University of Tokyo proposed a new ferroelectric FET (FE-FET) design with improved performance for both computing and memory. The transistor layers the two-dimensional semiconductor molybdenum disulfide (MoS2)... » read more

Chip Industry’s Technical Paper Roundup: July 18


New technical papers recently added to Semiconductor Engineering’s library: [table id=118 /] (more…) » read more

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