Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Chip Industry’s Technical Paper Roundup: Dec 11


New technical papers added to Semiconductor Engineering’s library this week. [table id=174 /] More ReadingTechnical Paper Library home » read more

Chip Industry’s Technical Paper Roundup: Dec 5


New technical papers recently added to Semiconductor Engineering’s library: [table id=171 /] More ReadingTechnical Paper Library home » read more

Research Bits: December 5


Neuromorphic nanowires Researchers from UCLA and University of Sydney built an experimental computing system physically modeled after the biological brain. The device is composed of a tangled-up network of wires containing silver and selenium that were allowed to self-organize into a network of entangled nanowires on top of an array of 16 electrodes. The nanowire network physically reconfigure... » read more

Research Bits: Nov. 28


Switchable photodetector and neuromorphic vision sensor Researchers from the Institute of Metal Research at the Chinese Academy of Sciences built a device that can be switched between being a photodetector and neuromorphic vision sensor by adjusting the operating voltage. The trench-bridged GaN/Ga2O3/GaN heterojunction array device exhibits volatile and non-volatile photocurrents at low and hi... » read more

Technical Paper Roundup: November 28


New technical papers recently added to Semiconductor Engineering’s library: [table id=169 /] More Reading Technical Paper Library home » read more

Technical Paper Roundup: November 21


New technical papers recently added to Semiconductor Engineering’s library: [table id=167 /] More Reading Technical Paper Library home » read more

Research Bits: November 21


MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

Technical Paper Roundup: November 14


New technical papers added to Semiconductor Engineering’s library this week. [table id=165 /] More Reading Technical Paper Library home » read more

Research Bits: November 14


Solid-state thermal transistor for heat management Researchers from University of California Los Angeles created a stable and fully solid-state thermal transistor that uses an electric field to control a semiconductor device’s heat movement. It is compatible with integrated circuits in semiconductor manufacturing processes. The team’s design incorporates the field effect on charge dynamics... » read more

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