category: Special Reports

category: IoT, Security & Automotive

Evolution Vs. Revolution
By Ann Mutschler - 27 Feb, 2014 - Comments: 1

In the electronic design automation industry changes to tools and flows are nearly always evolutionary. They hide as much change from the user as possible, allowing easier justification from an ROI perspective, and they raise far fewer objections from users, who don’t have to spend time learning how to use new technology or rethink tried and true approaches to problems. Revolution in chip ... » read more

Are Processors Running Out Of Steam?
By Ed Sperling - 24 Feb, 2014 - Comments: 1

Check out any smart phone these days and you’ll find some reference to the number of cores in the device. It’s not the number of cores that makes a difference, though—or even the clock speed at which they run. Performance depends on the underlying design for how they’re utilized, how often that happens, how much memory they share, how much interaction there is between the cores, and the... » read more

New Challenges For Post-Silicon Channel Materials
By Katherine Derbyshire - 21 Feb, 2014 - Comments: 1

In order to bring alternative channel materials into the CMOS mainstream, manufacturers need not just individual transistor devices, but fully manufacturable process flows. Work presented at the recent IEEE Electron Device Meeting (Washington, D.C., Dec. 9-11, 2013) showed that substantial work remains to be done on almost all aspects of such a flow. First and most fundamentally, it is diffi... » read more

The Search For The Next Transistor
By Mark LaPedus - 20 Feb, 2014 - Comments: 3

In the near term, the leading-edge chip roadmap looks fairly clear. Chips based on today’s finFETs and planar fully depleted silicon-on-insulator (FDSOI) technologies are expected to scale down to the 10nm node. But then, the CMOS roadmap becomes foggy at 7nm and beyond. The industry has been exploring a number of next-generation transistor candidates, but suddenly, a few technologies are ... » read more

The List Of Unknowns Grows After Silicon
By Katherine Derbyshire - 07 Feb, 2014 - Comments: 3

As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

The Next Big Threat: System Security
By Ed Sperling - 31 Jan, 2014 - Comments: 0

No SoC ever will be totally secure, and no technology will stop experienced thieves who really want to get into a device. But chipmakers and IP companies are examining ways to at least make it more difficult—and at least in theory, far less lucrative. One big change, of course, is that a connected electronic ecosystem has made location irrelevant. In the past, crime was limited to where th... » read more

What’s After CMOS?
By Mark LaPedus - 24 Jan, 2014 - Comments: 3

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in the 2021 timeframe. And then, CMOS could run out of gas, prompting the need for a new switch technology. So what’s after the CMOS-based transistor? Carbon nanotubes and graphene get the most a... » read more

The Next Big Threat: Manufacturing
By Ed Sperling - 23 Jan, 2014 - Comments: 0

The business adage that you’re only as good as your partners should be a core principle of doing business when it comes to security. But with a complex SoC you don’t always know all your partners, who financed them—or worse, who else they’re working with or working for. Consider this scenario: A band of sophisticated thieves grinds off the top of an SoC package, inserts probes to map... » read more

What’s After Silicon?
By Katherine Derbyshire - 09 Jan, 2014 - Comments: 4

As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

Where Is 2.5D?
By Ed Sperling - 19 Dec, 2013 - Comments: 3

After nearly five years of concentrated research, development, test chips and characterization, 2.5D remains a possibility for many companies but a reality for very few. So what’s taking so long and why hasn’t all of this hype turned into production runs instead of test chips? Semiconductor Engineering spent the past two months interviewing dozens of people on this subject, from chipmakers ... » read more

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