Selective etching of silicon nitride over silicon oxide using ClF3 /H2 remote plasma


Researchers from Sungkyunkwan University, MIT and others present an option for selective etching. Abstract "Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiNx over SiOy has been investiga... » read more

Source performance metrics for EUV mask inspection


Abstract "Rules are derived to obtain specifications on radiance, power, lifetime, and cleanliness of the source for an actinic patterned mask inspection system. We focus on the physical processes and technological aspects governing the requirements of radiation sources for reticle inspection. We discuss differences and similarities to scanner with respect to magnification, system etendue, a... » read more

Gallium Oxide Power Electronic Roadmap


New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

Novel Methods To Enhance Data Quality in FMEA Documents In Semiconductor Manufacturing


New research paper from Graz University of Technology & others. Abstract "Digitalization of causal domain knowledge is crucial. Especially since the inclusion of causal domain knowledge in the data analysis processes helps to avoid biased results. To extract such knowledge, the Failure Mode Effect Analysis (FMEA) documents represent a valuable data source. Originally, FMEA documents were de... » read more

Direct Chemisorption-Assisted Nanotransfer Printing with Wafer-Scale Uniformity and Controllability


New academic paper from Nanyang Technological University, Korea Institute of Machinery & Materials, and Southwest Jiaotong University. Abstract "Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However, conventional methods via a chemical medium hamper the efficient fabrication with large-area... » read more

Review of essential use of fluorochemicals in lithographic patterning and semiconductor processing


New academic paper by researchers from Cornell University.   Abstract "We identify and describe categories of fluorochemicals used to produce advanced semiconductors within the lithographic patterning manufacturing processes. Topics discussed include the per- and polyfluoroalkyl substance (PFAS) materials used and their necessary attributes for successful semiconductor manufacturing... » read more

Qubits made by advanced semiconductor manufacturing


Abstract: "Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yie... » read more

An achromatic X-ray lens


Abstract "Diffractive and refractive optical elements have become an integral part of most high-resolution X-ray microscopes. However, they suffer from inherent chromatic aberration. This has to date restricted their use to narrow-bandwidth radiation, essentially limiting such high-resolution X-ray microscopes to high-brightness synchrotron sources. Similar to visible light optics, one way t... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors


Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

Microsphere-assisted, nanospot, non-destructive metrology for semiconductor devices


Abstract "As smaller structures are being increasingly adopted in the semiconductor industry, the performance of memory and logic devices is being continuously improved with innovative 3D integration schemes as well as shrinking and stacking strategies. Owing to the increasing complexity of the design architectures, optical metrology techniques including spectroscopic ellipsometry (SE) and ref... » read more

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