category: Materials

category: IoT, Security & Automotive

New Polymer-Based Semiconductor: Harnessing The Power of Chirality
By Technical Paper Link - 20 Nov, 2023 - Comments: 0

A technical paper titled “Subtle Molecular Changes Largely Modulate Chiral Helical Assemblies of Achiral Conjugated Polymers by Tuning Solution-State Aggregation” was published by researchers at University of Illinois Urbana-Champaign and Purdue University. Abstract: "Understanding the solution-state aggregate structure and the consequent hierarchical assembly of conjugated polymers is cr... » read more

Selected I-III-VI2 Semiconductors: Synthesis, Properties, and Applications (Université de Lorraine)
By Technical Paper Link - 20 Nov, 2023 - Comments: 0

A technical paper titled “Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells” was published by researchers at Université de Lorraine, CNRS. Abstract: "I–III–VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of... » read more

Using Atomic Vacancies In Silicon Carbide To Measure The Stability And Quality Of Acoustic Resonators
By Technical Paper Link - 14 Nov, 2023 - Comments: 0

A technical paper titled “Spin-acoustic control of silicon vacancies in 4H silicon carbide” was published by researchers at Harvard University and Purdue University. Abstract: "Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challenging as... » read more

A Modelling Approach To Well-Known And Exotic 2D Materials For Next-Gen FETs
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich. Abstract: "Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity... » read more

Progress In The Fabrication Of CMOS Devices Based On Stacked 2D TMD Nanoribbons (Intel)
By Technical Paper Link - 27 Oct, 2023 - Comments: 0

A technical paper titled “Process integration and future outlook of 2D transistors” was published by researchers at Intel Corporation. Abstract: "The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the r... » read more

Discovering Orbital Multiferroicity in Pentalayer Rhombohedral Graphene (MIT)
By Technical Paper Link - 24 Oct, 2023 - Comments: 0

A technical paper titled “Orbital Multiferroicity in Pentalayer Rhombohedral Graphene” was published by researchers at Massachusetts Institute of Technology. Abstract (partial): "Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-fu... » read more

Four Vertical Power Delivery Architectures For Emerging Packaging and Integration Platforms (UIC)
By Technical Paper Link - 16 Oct, 2023 - Comments: 0

A technical paper titled “Vertical Power Delivery for Emerging Packaging and Integration Platforms – Power Conversion and Distribution” was published by researchers at University of Illinois Chicago. Abstract: "Efficient delivery of current from PCB to point-of-load (POL) is a primary concern in modern high-power high-density integrated systems. Traditionally, a 48 V power signal is con... » read more

Patterning With EUV Lithography Without Photoresists
By Technical Paper Link - 12 Oct, 2023 - Comments: 0

A technical paper titled “Resistless EUV lithography: photon-induced oxide patterning on silicon” was published by researchers at Paul Scherrer Institute, University College London, ETH Zürich, and EPFL. Abstract: "In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading ... » read more

CMOS Compatible Materials With Quantum Defects Suitable For Room Temperature Applications
By Technical Paper Link - 11 Oct, 2023 - Comments: 0

A technical paper titled “Thin Film Materials for Room Temperature Quantum Applications” was published by researchers at Marquette University. Abstract: "Thin films with quantum defects are emerging as a potential platform for quantum applications. Quantum defects in some thin films arise due to structural imperfections, such as vacancies or impurities. These defects generate localized el... » read more

Fabless Approach To Embed Active Nanophotonics in Bulk CMOS By Co-Designing The BEOL Layers For Optical Functionality (MIT)
By Technical Paper Link - 11 Oct, 2023 - Comments: 0

A technical paper titled “Metal-Optic Nanophotonic Modulators in Standard CMOS Technology” was published by researchers at Massachusetts Institute of Technology. Abstract: "Integrating nanophotonics with electronics promises revolutionary applications ranging from light detection and ranging (LiDAR) to holographic displays. Although semiconductor manufacturing of nanophotonics in Silicon ... » read more

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