category: Materials

category: IoT, Security & Automotive

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)
By Technical Paper Link - 06 May, 2023 - Comments: 0

A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

NIST Releases “Vision And Strategy for the National Semiconductor Technology Center”
By Technical Paper Link - 05 May, 2023 - Comments: 0

A paper titled "A Vision and Strategy for the National Semiconductor Technology Center" was published by the U.S. Department of Commerce’s National Institute of Standards and Technology (NIST). The paper describes how the NSTC (National Semiconductor Technology Center) will develop and safeguard chips and technologies of the future. “The NSTC will be an ambitious public-private consortiu... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)
By Technical Paper Link - 05 May, 2023 - Comments: 0

A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Using The Schottky Barrier Transistor in Various Applications & Material Systems
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

Optimizing The Growth And Transfer Process of Graphene (Cambridge, RWTH Aachen)
By Technical Paper Link - 21 Apr, 2023 - Comments: 0

A technical paper titled "Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene" was published by researchers at University of Cambridge, RWTH Aachen University, and National Institute for Materials Science. Abstract: "Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a ch... » read more

New Group Of Non-vdW 2D Materials Derived From Non-Layered Crystals Exhibiting Ultra Low Exfoliation Energies
By Technical Paper Link - 11 Apr, 2023 - Comments: 0

A new technical paper titled "A New Group of 2D Non-van der Waals Materials with Ultra Low Exfoliation Energies" was published by TU Dresden, HZDR, and Aalto University. Abstract: "The exfoliation energy—quantifying the energy required to extract a two-dimensional (2D) sheet from the surface of a bulk material—is a key parameter determining the synthesizability of 2D compounds. Here, ... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si
By Technical Paper Link - 10 Apr, 2023 - Comments: 0

A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Power Semiconductor Devices: Thermal Management and Packaging
By Technical Paper Link - 10 Apr, 2023 - Comments: 0

A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Ferroelectric Polarization in an Elementary Substance or Single-Element Compound
By Technical Paper Link - 09 Apr, 2023 - Comments: 0

A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2025 SMG   |  Terms of Service  |  Privacy Policy