Ferroelectric Polarization in an Elementary Substance or Single-Element Compound


A technical paper titled "Two-dimensional ferroelectricity in a single-element bismuth monolayer" was published by researchers at National University of Singapore, Zhejiang University, Tianjin University, and University of Chinese Academy of Sciences. Abstract "Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversi... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3


A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Using Photonic Band Gap in Triangular SiC Structures for Efficient Quantum Nanophotonic HW


A new technical paper titled "Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware" was published by researchers at UC Davis. Abstract: "Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silico... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD


A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Interconnects: Exploring Semi-Metals (Penn State, IBM, Rice University)


A technical paper titled "Exploring Topological Semi-Metals for Interconnects" was published by researchers at Penn State, IBM, and Rice University, with funding by Semiconductor Research Corporation (SRC). Abstract "The size of transistors has drastically reduced over the years. Interconnects have likewise also been scaled down. Today, conventional copper (Cu)-based interconnects face a ... » read more

Photonics: GaSb/SiN Tunable Hybrid Integrated Laser


A new technical paper titled "Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector" was published by researchers at Tampere University in Finland. Abstract: "Tunable lasers emitting in the 2–3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To ... » read more

New Spintronics Manufacturing Process, Allowing Scaling Down To Sub-5nm (U. of Minnesota/NIST)


A new technical paper titled "Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics" was published by researchers at University of Minnesota and NIST, with funding by DARPA and others. According to a University of Minnesota summary news article, "The industry standard spintronic material, cobalt iron boron, has reached a limit in its scalability. The... » read more

Room-Temperature Metal Bonding Technology That Facilitates The Fabrication of 3D-ICs & 3D Integration With Heterogeneous Devices


A technical paper titled "Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED" was published by researchers at Tohoku University in Japan. Abstract: "This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100- μm -cubed blue μ LED... » read more

Shift Register-In-Memory Architecture


A new technical paper titled "Toward Single-Cell Multiple-Strategy Processing Shift Register Powered by Phase-Change Memory Materials" was published by researchers at Singapore University of Technology and Design and University of Cambridge. Abstract "Modern innovations are built on the foundation of computers. Compared to von Neumann architectures having separate storage and processing uni... » read more

Large-Scale Nanometer-Thick Graphite Film (NGF) As A EUV Pellicle


A new technical paper titled "Graphite Pellicle: Physical Shield for Next-Generation EUV Lithography Technology" was published by researchers at University of Ottawa, Sungkyunkwan University, and Hanbat National University. Abstract "Extreme ultraviolet lithography (EUVL) is widely employed in the electronics, automotive, military, and AI computing areas for IC chip fabrication. A pellicl... » read more

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