The resurrection of tellurium as an elemental two-dimensional semiconductor


Abstract "The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, ... » read more

Flat-surface-assisted and self-regulated oxidation resistance of Cu(111)


Abstract "Oxidation can deteriorate the properties of copper that are critical for its use, particularly in the semiconductor industry and electro-optics applications. This has prompted numerous studies exploring copper oxidation and possible passivation strategies. In situ observations have, for example, shown that oxidation involves stepped surfaces: Cu2O growth occurs on flat surfaces as a ... » read more

Programmable black phosphorus image sensor for broadband optoelectronic edge computing


Abstract "Image sensors with internal computing capability enable in-sensor computing that can significantly reduce the communication latency and power consumption for machine vision in distributed systems and robotics. Two-dimensional semiconductors have many advantages in realizing such intelligent vision sensors because of their tunable electrical and optical properties and amenability fo... » read more

2D materials for future heterogeneous electronics


Abstract "Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled ... » read more

Large-area photonic lift-off process for flexible thin-film transistors


Abstract "Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer f... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors


Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates


Abstract: "We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 μm thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showi... » read more

Interfacial ferroelectricity in marginally twisted 2D semiconductors


Abstract "Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of tw... » read more

Excess noise in high-current diamond diodes


Abstract "We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with l... » read more

Chemoselective Surface Trap-Mediated Metal Growth on Semiconductor Nanocrystals


Abstract "We present a highly chemoselective deposition of precious metals on semiconductor nanoheterostructures with a strong preference for cadmium and zinc telluride over the lighter chalcogenides. The selectivity is explained by p-type surface traps on the tellurides, compared to n-type defects of the homologous sulfides and selenides, and can be turned off by passivating the particle su... » read more

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