category: Materials

category: IoT, Security & Automotive

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narro... » read more

Roadmap on organic–inorganic hybrid perovskite semiconductors and devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

ABSTRACT Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various optoelectronic devices, such as solar cells, photodetectors, light emitting and memory devices, and so on. Until now, perovskit... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

Materials and Device Simulations for Silicon Qubit Design and Optimization
By Technical Paper Link - 27 Oct, 2021 - Comments: 0

Abstract: "Silicon-based microelectronics technology is extremely mature, yet this profoundly important material is now also poised to become a foundation for quantum information processing technologies. In this article, we review the properties of silicon that have made it the material of choice for semiconductor-based qubits with an emphasis on the role that modeling and simulation have play... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Dual Surface Architectonics for Directed Self‐Assembly of Ultrahigh‐Resolution Electronics
By Technical Paper Link - 11 Oct, 2021 - Comments: 0

Abstract: "The directed self‐assembly of electronic circuits using functional metallic inks has attracted intensive attention because of its high compatibility with extensive applications ranging from soft printed circuits to wearable devices. However, the typical resolution of conventional self‐assembly technologies is not sufficient for practical applications in the rapidly evolving addi... » read more

Multicolored Nanocolloidal Hydrogel Inks For Anti-Counterfeiting
By Technical Paper Link - 11 Oct, 2021 - Comments: 0

Abstract "Nanocolloidal gels are emerging as a promising class of materials with applications as inks in 2D and 3D printing. Polymer nanoparticles (NPs) offer many advantages as potential building blocks of nanocolloidal gels, due to the ability to control NP dimensions, charge, surface chemistry, and functionality; however, their applications as inks in printing are yet to be explored. Here, ... » read more

Probe assisted localized doping of aluminum into silicon substrates
By Technical Paper Link - 11 Oct, 2021 - Comments: 0

Abstract "This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency (RF) electronic signature, which could be leveraged into an identification feature unique to the tag item. This will allow any manuf... » read more

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
By Technical Paper Link - 06 Oct, 2021 - Comments: 0

Abstract "A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug effici... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides
By Technical Paper Link - 24 Aug, 2021 - Comments: 0

Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

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