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High-performance flexible nanoscale transistors based on transition metal dichalcogenides

Flexible MoS2 transistors fabricated using chemical vapor deposition.

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Read the paper here. Published June 17, 2021, Nature Electronics.

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advantages of 2D materials. Here, we report flexible nanoscale FETs based on 2D semiconductors; these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates together with nano-patterned metal contacts, using a polyimide film, which becomes the flexible substrate after release. Transistors based on monolayer molybdenum disulfide (MoS2) are created with channel lengths down to 60 nm and on-state currents up to 470 μA μm−1 at a drain–source voltage of 1 V, which is comparable to the performance of flexible graphene and crystalline silicon FETs. Despite the low thermal conductivity of the flexible substrate, we find that heat spreading through the metal gate and contacts is essential to reach such high current densities. We also show that the approach can be used to create flexible FETs based on molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2).

Daus, A., Vaziri, S., Chen, V. et al. High-performance flexible nanoscale transistors based on transition metal dichalcogenides. Nat Electron 4, 495–501 (2021). https://doi.org/10.1038/s41928-021-00598-6



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