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Scalable Approach to Fabricate Memristor Arrays at Wafer-scale


New technical paper titled "Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing" from researchers at National University of Singapore and Institute of High Performance Computing, Singapore. Abstract "Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their develop... » read more

Vertical MoS2 transistors with sub-1-nm gate lengths


Abstract "Ultra-scaled transistors are of interest in the development of next-generation electronic devices. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported, the fabrication of devices with gate lengths below 1 nm has been challenging. Here we demonstrate side-wall MoS2 transistors with an atomically thin channel and a physical gate length of sub-1 nm ... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors


Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates


Abstract: "We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 μm thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showi... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides


Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

Power/Performance Bits: Aug. 24


Low power AI Engineers at the Swiss Center for Electronics and Microtechnology (CSEM) designed an SoC for edge AI applications that can run on solar power or a small battery. The SoC consists of an ASIC chip with RISC-V processor developed at CSEM along with two tightly coupled machine-learning accelerators: one for face detection, for example, and one for classification. The first is a bin... » read more

Power/Performance Bits: Dec. 7


Logic-in-memory with MoS2 Engineers at École Polytechnique Fédérale de Lausanne (EPFL) built a logic-in-memory device using molybdenum disulfide (MoS2) as the channel material. MoS2 is a three-atom-thick 2D material and excellent semiconductor. The new chip is based on floating-gate field-effect transistors (FGFETs) that can hold electric charges for long periods. MoS2 is particularly se... » read more

Power/Performance Bits: April 25


Thermal diode Engineers at the University of Nebraska-Lincoln developed a nano-thermal-mechanical device, or thermal diode, which uses heat as an alternative energy source that would allow computing at ultra-high temperatures. "If you think about it, whatever you do with electricity you should (also) be able to do with heat, because they are similar in many ways," said Sidy Ndao, assistan... » read more

Power/Performance Bits: Oct. 11


Getting to 1nm Researchers at the Lawrence Berkeley National Laboratory, UC Berkeley, University of Texas at Dallas, and Stanford University created a transistor with a working 1nm gate from carbon nanotubes and molybdenum disulfide (MoS2). "The semiconductor industry has long assumed that any gate below 5 nanometers wouldn't work, so anything below that was not even considered," said fir... » read more

Power/Performance Bits: May 10


Non-toxic thin-films A team at Australia's University of New South Wales achieved the world's highest efficiency using flexible solar cells that are non-toxic and cheap to make, with a record 7.6% efficiency in a 1cm2 area thin-film CZTS cell. Unlike its thin-film competitors, CZTS cells are made from abundant materials: copper, zinc, tin and sulphur, and has none of the toxicity problems... » read more

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