Probe assisted localized doping of aluminum into silicon substrates

Probe assisted doping technique (PAD), a technology that could help prevent counterfeit chips and electronic devices from entering the market.


“This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency (RF) electronic signature, which could be leveraged into an identification feature unique to the tag item. This will allow any manufactured item (integrated circuit, pharmaceutical, etc.) to be uniquely identifiable and authenticatable. Applications of this technology include enabling a secure Internet of Things (IoT) and eliminating counterfeit products.”

Published: September 16, 2021
Author(s): Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Jihong Kim. NIST

Find the open access technical paper link here.

Leave a Reply

(Note: This name will be displayed publicly)