category: Memory

category: IoT, Security & Automotive

All-inorganic perovskite quantum dot light-emitting memories
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract "Field-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-e... » read more

QUAC-TRNG: High-Throughput True Random Number Generation Using Quadruple Row Activation in Commodity DRAM Chips
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract "True random number generators (TRNG) sample random physical processes to create large amounts of random numbers for various use cases, including security-critical cryptographic primitives, scientific simulations, machine learning applications, and even recreational entertainment. Unfortunately, not every computing system is equipped with dedicated TRNG hardware, limiting the applicat... » read more

HARP: Practically and Effectively Identifying Uncorrectable Errors in Memory Chips That Use On-Die Error-Correcting Codes
By Technical Paper Link - 18 Nov, 2021 - Comments: 0

Abstract: "State-of-the-art techniques for addressing scaling-related main memory errors identify and repair bits that are at risk of error from within the memory controller. Unfortunately, modern main memory chips internally use on-die error correcting codes (on-die ECC) that obfuscate the memory controller's view of errors, complicating the process of identifying at-risk bits (i.e., error pr... » read more

Uncovering In-DRAM RowHammer Protection Mechanisms: A New Methodology, Custom RowHammer Patterns, and Implications
By Technical Paper Link - 15 Nov, 2021 - Comments: 0

Abstract: "The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known as Target Row Refresh (TRR). At a high level, TRR detects and refreshes potential RowHammer-victim rows, but its exact are not openly disclose... » read more

Improving DRAM Performance, Security, and Reliability by Understanding and Exploiting DRAM Timing Parameter Margins
By Technical Paper Link - 14 Nov, 2021 - Comments: 0

Abstract: "Characterization of real DRAM devices has enabled findings in DRAM device properties, which has led to proposals that significantly improve overall system performance by reducing DRAM access latency and power consumption. In addition to improving system performance, a deeper understanding of DRAM technology via characterization can also improve device reliability and security. The... » read more

A Deeper Look into RowHammer’s Sensitivities: Experimental Analysis of Real DRAM Chips and Implications on Future Attacks and Defenses
By Technical Paper Link - 14 Nov, 2021 - Comments: 0

Abstract "RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink. Recent studies demonstrate that modern DRAM chips, including chips previously marketed as RowHammer-safe, are even more vulnerable to RowHammer than... » read more

Accelerating Inference of Convolutional Neural Networks Using In-memory Computing
By Technical Paper Link - 09 Nov, 2021 - Comments: 0

Abstract: "In-memory computing (IMC) is a non-von Neumann paradigm that has recently established itself as a promising approach for energy-efficient, high throughput hardware for deep learning applications. One prominent application of IMC is that of performing matrix-vector multiplication in (1) time complexity by mapping the synaptic weights of a neural-network layer to the devices of an ... » read more

Neuromorphic electronics based on copying and pasting the brain
By Technical Paper Link - 09 Nov, 2021 - Comments: 1

Abstract: "Reverse engineering the brain by mimicking the structure and function of neuronal networks on a silicon integrated circuit was the original goal of neuromorphic engineering, but remains a distant prospect. The focus of neuromorphic engineering has thus been relaxed from rigorous brain mimicry to designs inspired by qualitative features of the brain, including event-driven sign... » read more

Standards for the Characterization of Endurance in Resistive Switching Devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
By Technical Paper Link - 06 Oct, 2021 - Comments: 0

Abstract "Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility... » read more

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